IGW20N60H3 Todos los transistores

 

IGW20N60H3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGW20N60H3
   Tipo de transistor: IGBT
   Código de marcado: G20H603
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 170
   Tensión máxima colector-emisor |Vce|, V: 600
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 40
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.95
   Tensión máxima de puerta-umbral |VGE(th)|, V: 5.7
   Temperatura máxima de unión (Tj), ℃: 175
   Tiempo de subida (tr), typ, nS: 23
   Capacitancia de salida (Cc), typ, pF: 70
   Carga total de la puerta (Qg), typ, nC: 120
   Paquete / Cubierta: TO247

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IGW20N60H3 Datasheet (PDF)

 ..1. Size:1562K  infineon
igw20n60h3 rev1 1g.pdf

IGW20N60H3 IGW20N60H3

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGW20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d

 ..2. Size:1998K  infineon
igw20n60h3.pdf

IGW20N60H3 IGW20N60H3

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW20N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGW20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d

Otros transistores... IGW15N120H3 , IGW40N120H3 , IGP20N60H3 , IGP30N60H3 , IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , FGPF4633 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 .

 

 
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