IGW20N60H3 Todos los transistores

 

IGW20N60H3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IGW20N60H3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 170 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃

trⓘ - Tiempo de subida, typ: 23 nS

Coesⓘ - Capacitancia de salida, typ: 70 pF

Encapsulados: TO247

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IGW20N60H3 datasheet

 ..1. Size:1562K  infineon
igw20n60h3 rev1 1g.pdf pdf_icon

IGW20N60H3

IGBT High speed IGBT in Trench and Fieldstop technology IGW20N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel d

 ..2. Size:1998K  infineon
igw20n60h3.pdf pdf_icon

IGW20N60H3

IGBT High speed IGBT in Trench and Fieldstop technology IGW20N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGW20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel d

Otros transistores... IGW15N120H3 , IGW40N120H3 , IGP20N60H3 , IGP30N60H3 , IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IRGP4086 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 .

History: IGP20N60H3

 

 

 


History: IGP20N60H3

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