IGW20N60H3 Specs and Replacement
Type Designator: IGW20N60H3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 170 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
tr ⓘ - Rise Time, typ: 23 nS
Coesⓘ - Output Capacitance, typ: 70 pF
Package: TO247
IGW20N60H3 Substitution - IGBT ⓘ Cross-Reference Search
IGW20N60H3 datasheet
igw20n60h3 rev1 1g.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGW20N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel d... See More ⇒
igw20n60h3.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGW20N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGW20N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel d... See More ⇒
Specs: IGW15N120H3 , IGW40N120H3 , IGP20N60H3 , IGP30N60H3 , IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IRGP4086 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 .
Keywords - IGW20N60H3 transistor spec
IGW20N60H3 cross reference
IGW20N60H3 equivalent finder
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