IGW20N60H3 Datasheet and Replacement
Type Designator: IGW20N60H3
Type: IGBT
Marking Code: G20H603
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 170 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 23 nS
Coesⓘ - Output Capacitance, typ: 70 pF
Qg ⓘ - Total Gate Charge, typ: 120 nC
Package: TO247
IGW20N60H3 substitution
IGW20N60H3 Datasheet (PDF)
igw20n60h3 rev1 1g.pdf
IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW20N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGW20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d
igw20n60h3.pdf
IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW20N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGW20N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d
Datasheet: IGW15N120H3 , IGW40N120H3 , IGP20N60H3 , IGP30N60H3 , IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , SGT60N60FD1P7 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 .
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