IGW30N100T Todos los transistores

 

IGW30N100T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGW30N100T
   Tipo de transistor: IGBT
   Código de marcado: G30T100
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 412 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 21 nS
   Coesⓘ - Capacitancia de salida, typ: 98 pF
   Qgⓘ - Carga total de la puerta, typ: 217 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IGW30N100T Datasheet (PDF)

 ..1. Size:797K  infineon
igw30n100t 2 4.pdf pdf_icon

IGW30N100T

IGW30N100TTrenchStop seriesLow Loss IGBT: IGBT in TrenchStop and Fieldstop technologyC TrenchStop and Fieldstop technology for 1000 V applications offers: - low VCEsatGE - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in VCEsat Designed for: - frequency Converters - uninterrupted P

 ..2. Size:720K  infineon
igw30n100t.pdf pdf_icon

IGW30N100T

IGW30N100TTrenchStop seriesLow Loss IGBT: IGBT in TrenchStop and Fieldstop technologyC TrenchStop and Fieldstop technology for 1000 V applications offers: - low VCE(sat)GE - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in VCE(sat) Designed for: - frequency Converters - uninterrupt

 8.1. Size:1561K  infineon
igw30n60h3 rev1 1g.pdf pdf_icon

IGW30N100T

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW30N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGW30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d

 8.2. Size:1458K  infineon
igw30n60tp.pdf pdf_icon

IGW30N100T

IGBTTRENCHSTOPTM Performance technologyIGW30N60TP600V IGBT TRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIGW30N60TPTRENCHSTOPTM Performance SeriesHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low turn-off losses short tail current low EMI G maximum junction temperat

Otros transistores... IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , GT30F133 , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , SIW75N65G2L2A , IGP30N60T .

History: IXST15N120BD1 | IGW30N60H3 | NGTB20N120IHS | HMG15N60 | MGP4N60E

 

 
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History: IXST15N120BD1 | IGW30N60H3 | NGTB20N120IHS | HMG15N60 | MGP4N60E

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