IGW30N100T Todos los transistores

 

IGW30N100T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IGW30N100T

Código: G30T100

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 412W

Tensión colector-emisor (Vce): 1000V

Voltaje de saturación colector-emisor (Vce sat): 1.55V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 60A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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IGW30N100T Datasheet (PDF)

1.1. igw30n100t 2 4.pdf Size:797K _infineon

IGW30N100T
IGW30N100T

IGW30N100T TrenchStop series Low Loss IGBT: IGBT in TrenchStop and Fieldstop technology C TrenchStop and Fieldstop technology for 1000 V applications offers: - low V CEsat G E - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in V CEsat Designed for: - frequency Converters - uninterrupted Power Suppl

1.2. igw30n100t.pdf Size:720K _igbt_a

IGW30N100T
IGW30N100T

IGW30N100T TrenchStop® series Low Loss IGBT: IGBT in TrenchStop® and Fieldstop technology C • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low V CE(sat) G E - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in V CE(sat) • Designed for: - frequency Converters - uninterrupt

 4.1. igw30n60h3 rev1 1g.pdf Size:1561K _infineon

IGW30N100T
IGW30N100T

IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features: C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel diode G

4.2. igw30n65l5.pdf Size:1872K _igbt_a

IGW30N100T
IGW30N100T

IGBT Low V IGBT in TRENCHSTOPTM 5 technology CE(sat) IGW30N65L5 650V IGBT Low V series fifth generation CE(sat) Data sheet Industrial Power Control IGW30N65L5 Low V series fifth generation CE(sat) Low V IGBT in TRENCHSTOPTM 5 technology CE(sat) Features and Benefits: C Low V L5 technology offering CE(sat) • Very low collector-emitter saturation voltage V CEsat • Best-in-C

 4.3. igw30n60h3.pdf Size:1521K _igbt_a

IGW30N100T
IGW30N100T

IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features: C TRENCHSTOPTM technology offering • very low V CEsat • low EMI • Very soft, fast recovery anti-parallel d

4.4. igw30n60t.pdf Size:379K _igbt_a

IGW30N100T
IGW30N100T

 IGP30N60T TrenchStop Series IGW30N60T Low Loss IGBT in Trench and Fieldstop technology C • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs G • Designed for : E - Frequency Converters - Uninterruptible Power Supply • Trench and Fieldstop technology for 600 V applications offers : - very tight paramete

Otros transistores... IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IRG4PH50UD , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , IGC70T120T8RL , IGP30N60T .

 
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