Справочник IGBT. IGW30N100T

 

IGW30N100T - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IGW30N100T
   Тип транзистора: IGBT
   Маркировка: G30T100
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 412 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1000 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.55 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.4 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 21 nS
   Coesⓘ - Выходная емкость, типовая: 98 pF
   Qgⓘ - Общий заряд затвора, typ: 217 nC
   Тип корпуса: TO247

 Аналог (замена) для IGW30N100T

 

 

IGW30N100T Datasheet (PDF)

 ..1. Size:797K  infineon
 igw30n100t 2 4.pdf

IGW30N100T IGW30N100T

IGW30N100TTrenchStop seriesLow Loss IGBT: IGBT in TrenchStop and Fieldstop technologyC TrenchStop and Fieldstop technology for 1000 V applications offers: - low VCEsatGE - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in VCEsat Designed for: - frequency Converters - uninterrupted P

 ..2. Size:720K  infineon
 igw30n100t.pdf

IGW30N100T IGW30N100T

IGW30N100TTrenchStop seriesLow Loss IGBT: IGBT in TrenchStop and Fieldstop technologyC TrenchStop and Fieldstop technology for 1000 V applications offers: - low VCE(sat)GE - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in VCE(sat) Designed for: - frequency Converters - uninterrupt

 8.1. Size:1561K  infineon
 igw30n60h3 rev1 1g.pdf

IGW30N100T IGW30N100T

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW30N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGW30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d

 8.2. Size:1458K  infineon
 igw30n60tp.pdf

IGW30N100T IGW30N100T

IGBTTRENCHSTOPTM Performance technologyIGW30N60TP600V IGBT TRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIGW30N60TPTRENCHSTOPTM Performance SeriesHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low turn-off losses short tail current low EMI G maximum junction temperat

 8.3. Size:1997K  infineon
 igw30n60h3.pdf

IGW30N100T IGW30N100T

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW30N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGW30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d

 8.4. Size:490K  infineon
 igw30n60t.pdf

IGW30N100T IGW30N100T

IGW30N60T TRENCHSTOP Series Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology Features: C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterruptible Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers :

 8.5. Size:1778K  infineon
 igw30n65l5.pdf

IGW30N100T IGW30N100T

IGBTLow V IGBT in TRENCHSTOPTM 5 technologyCE(sat)IGW30N65L5650V IGBT Low V series fifth generationCE(sat)Data sheetIndustrial Power ControlIGW30N65L5Low V series fifth generationCE(sat)Low V IGBT in TRENCHSTOPTM 5 technologyCE(sat)Features and Benefits: CLow V L5 technology offeringCE(sat) Very low collector-emitter saturation voltage VCEsat Best-in-C

Другие IGBT... IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , NGD8201N , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , SIW75N65G2L2A , IGP30N60T .

 

 
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