All IGBT. IGW30N100T Datasheet

 

IGW30N100T IGBT. Datasheet pdf. Equivalent

Type Designator: IGW30N100T

Marking Code: G30T100

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 412W

Maximum Collector-Emitter Voltage |Vce|, V: 1000V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.55V

Maximum Collector Current |Ic|, A: 60A

Package: TO247

IGW30N100T Transistor Equivalent Substitute - IGBT Cross-Reference Search

IGW30N100T PDF doc:

1.1. igw30n100t_2_4.pdf Size:797K _infineon

IGW30N100T
IGW30N100T

IGW30N100T TrenchStop® series Low Loss IGBT: IGBT in TrenchStop® and Fieldstop technology C • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low V CEsat G E - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in V CEsat • Designed for: - frequency Converters - uninterrupted Power Suppl

1.2. igw30n100t.pdf Size:720K _igbt_a

IGW30N100T
IGW30N100T

IGW30N100T TrenchStop® series Low Loss IGBT: IGBT in TrenchStop® and Fieldstop technology C • TrenchStop® and Fieldstop technology for 1000 V applications offers: - low V CE(sat) G E - very tight parameter distribution - high ruggedness, temperature stable behavior - positive temperature coefficient in V CE(sat) • Designed for: - frequency Converters - uninterrupt

4.1. igw30n60h3_rev1_1g.pdf Size:1561K _infineon

IGW30N100T
IGW30N100T

IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features: C TRENCHSTOPTM technology offering • very low V CEsat • low EMI • Very soft, fast recovery anti-parallel diode G

4.2. igw30n65l5.pdf Size:1872K _igbt_a

IGW30N100T
IGW30N100T

IGBT Low V IGBT in TRENCHSTOPTM 5 technology CE(sat) IGW30N65L5 650V IGBT Low V series fifth generation CE(sat) Data sheet Industrial Power Control IGW30N65L5 Low V series fifth generation CE(sat) Low V IGBT in TRENCHSTOPTM 5 technology CE(sat) Features and Benefits: C Low V L5 technology offering CE(sat) • Very low collector-emitter saturation voltage V CEsat • Best-in-C

4.3. igw30n60h3.pdf Size:1521K _igbt_a

IGW30N100T
IGW30N100T

IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features: C TRENCHSTOPTM technology offering • very low V CEsat • low EMI • Very soft, fast recovery anti-parallel d

4.4. igw30n60t.pdf Size:379K _igbt_a

IGW30N100T
IGW30N100T

 IGP30N60T TrenchStop Series IGW30N60T Low Loss IGBT in Trench and Fieldstop technology C • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs G • Designed for : E - Frequency Converters - Uninterruptible Power Supply • Trench and Fieldstop technology for 600 V applications offers : - very tight paramete

Datasheet: IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , IRG4PH50UD , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , IGB30N60T , IGP30N60T .

 


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