IGW30N100T IGBT. Datasheet pdf. Equivalent
Type Designator: IGW30N100T
Type: IGBT
Marking Code: G30T100
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 412 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 21 nS
Coesⓘ - Output Capacitance, typ: 98 pF
Qgⓘ - Total Gate Charge, typ: 217 nC
Package: TO247
IGW30N100T Transistor Equivalent Substitute - IGBT Cross-Reference Search
IGW30N100T Datasheet (PDF)
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Datasheet: IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , NGD8201N , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , SIW75N65G2L2A , IGP30N60T .
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