IGW30N100T Datasheet and Replacement
Type Designator: IGW30N100T
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 412 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 21 nS
Coesⓘ - Output Capacitance, typ: 98 pF
Package: TO247
- IGBT Cross-Reference
IGW30N100T Datasheet (PDF)
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Datasheet: IGW50N60H3 , IGW40N60H3 , IGA30N60H3 , IGB20N60H3 , IGW20N60H3 , IGB30N60H3 , IGW30N60H3 , IGW40T120 , GT30F133 , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , SIW75N65G2L2A , IGP30N60T .
History: IXGN200N60A2 | IXGL200N60B3 | DG40F12T2 | MGP4N60E | IXGN200N60B3 | IXDH35N60BD1 | IXGT32N60BD1
Keywords - IGW30N100T transistor datasheet
IGW30N100T cross reference
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History: IXGN200N60A2 | IXGL200N60B3 | DG40F12T2 | MGP4N60E | IXGN200N60B3 | IXDH35N60BD1 | IXGT32N60BD1



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