IGD06N60T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGD06N60T
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 88 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 12 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 6 nS
Coesⓘ - Capacitancia de salida, typ: 28 pF
Paquete / Cubierta: TO252
- Selección de transistores por parámetros
IGD06N60T Datasheet (PDF)
igd06n60t.pdf
IGD06N60T TRENCHSTOP Series q Low Loss IGBT: IGBT in TRENCHSTOP and Fieldstop technology Features: Very low VCE(sat) 1.5 V (typ.) C Maximum Junction Temperature 175C Short circuit withstand time 5s TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution GE - high ruggedness, temperature stable beha
igd06n60trev2 1.pdf
IGD06N60T TrenchStop Series q Low Loss IGBT: IGBT in TrenchStop and Fieldstop technology Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G TrenchStop and Fieldstop technology for 600 V applications offers : E - very tight parameter distribution - high ruggedness, temperature stabl
Otros transistores... IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 , IKW30N60H3 , IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IGW75N60T , IGB10N60T .
History: DF900R12IP4D | STGWT30V60F | T0360NB25A
History: DF900R12IP4D | STGWT30V60F | T0360NB25A
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
irfp150n | mj15025 | mp1620 | kta1381 | bf494 | 2sc1885 | skd502t | 2sb754