All IGBT. IGD06N60T Datasheet

 

IGD06N60T Datasheet and Replacement


   Type Designator: IGD06N60T
   Type: IGBT
   Marking Code: G06T60
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 88 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 12 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 6 nS
   Coesⓘ - Output Capacitance, typ: 28 pF
   Qgⓘ - Total Gate Charge, typ: 42 nC
   Package: TO252
      - IGBT Cross-Reference

 

IGD06N60T Datasheet (PDF)

 ..1. Size:427K  infineon
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IGD06N60T

IGD06N60T TRENCHSTOP Series q Low Loss IGBT: IGBT in TRENCHSTOP and Fieldstop technology Features: Very low VCE(sat) 1.5 V (typ.) C Maximum Junction Temperature 175C Short circuit withstand time 5s TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution GE - high ruggedness, temperature stable beha

 0.1. Size:758K  infineon
 igd06n60trev2 1.pdf pdf_icon

IGD06N60T

IGD06N60T TrenchStop Series q Low Loss IGBT: IGBT in TrenchStop and Fieldstop technology Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G TrenchStop and Fieldstop technology for 600 V applications offers : E - very tight parameter distribution - high ruggedness, temperature stabl

Datasheet: IGB30N60H3 , IGW30N60H3 , IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 , IKW30N60H3 , IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IGW75N60T , IGB10N60T .

History: DIM1800ESS12-A | IGC07T120T6L | IGW30N60T | IGC18T120T6L | IGP20N65F5 | IGB50N65S5 | DF650R17IE4D_B2

Keywords - IGD06N60T transistor datasheet

 IGD06N60T cross reference
 IGD06N60T equivalent finder
 IGD06N60T lookup
 IGD06N60T substitution
 IGD06N60T replacement

 

 
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