SIW75N65G2L2A Todos los transistores

 

SIW75N65G2L2A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SIW75N65G2L2A
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 400 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 49 nS
   Coesⓘ - Capacitancia de salida, typ: 264 pF
   Paquete / Cubierta: TO247
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SIW75N65G2L2A Datasheet (PDF)

 ..1. Size:700K  cn super semi
 siw75n65g2l2a.pdf pdf_icon

SIW75N65G2L2A

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*75N65G2L2ARev. 1.1Jul. 2023www.supersemi.com.cnSIW75N65G2L2A650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 75 Atechnology. The SJ-IGBT series provides lowVCE(sat)

 4.1. Size:701K  cn super semi
 siw75n65g2h2a.pdf pdf_icon

SIW75N65G2L2A

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*75N65G2H2ARev. 1.1Jul. 2023www.supersemi.com.cnSIW75N65G2H2A650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 75 Atechnology. The SJ-IGBT series provides lowVCE(sat)

Otros transistores... IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , CRG60T60AK3HD , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IGW75N60T , IGB10N60T , IGP06N60T , IGP10N60T .

History: IXGH56N60A3 | MMG400Q060B6EN | IXBN75N170A | 2MBI200TA-060 | IRG4BC30KD | BSM600GA120DLC | STGE50NC60WD

 

 
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