All IGBT. SIW75N65G2L2A Datasheet

 

SIW75N65G2L2A Datasheet and Replacement


   Type Designator: SIW75N65G2L2A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 90 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 49 nS
   Coesⓘ - Output Capacitance, typ: 264 pF
   Qg ⓘ - Total Gate Charge, typ: 161 nC
   Package: TO247
 

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SIW75N65G2L2A Datasheet (PDF)

 ..1. Size:700K  cn super semi
 siw75n65g2l2a.pdf pdf_icon

SIW75N65G2L2A

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*75N65G2L2ARev. 1.1Jul. 2023www.supersemi.com.cnSIW75N65G2L2A650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 75 Atechnology. The SJ-IGBT series provides lowVCE(sat)

 4.1. Size:701K  cn super semi
 siw75n65g2h2a.pdf pdf_icon

SIW75N65G2L2A

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*75N65G2H2ARev. 1.1Jul. 2023www.supersemi.com.cnSIW75N65G2H2A650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 75 Atechnology. The SJ-IGBT series provides lowVCE(sat)

Datasheet: IGW40T120 , IGW30N100T , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , JT075N065WED , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IGW75N60T , IGB10N60T , IGP06N60T , IGP10N60T .

Keywords - SIW75N65G2L2A transistor datasheet

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