IGP30N60T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGP30N60T
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 187 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 21 nS
Coesⓘ - Capacitancia de salida, typ: 1087 pF
Paquete / Cubierta: TO220
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IGP30N60T Datasheet (PDF)
igp30n60t.pdf
IGP30N60T TrenchStop Series IGW30N60TLow Loss IGBT in Trench and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight paramete
igp30n60h3.pdf
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igp30n60h3 rev1 2g.pdf
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igp30n65f5.pdf
IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGP30N65F5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP30N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and resonant
igp30n65h5.pdf
IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyIGP30N65H5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP30N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologi
Otros transistores... IGW30N100T , IGW08T120 , IGW15T120 , IGW25T120 , IGW60T120 , IGD06N60T , IGB15N60T , SIW75N65G2L2A , GT45F122 , BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IGW75N60T , IGB10N60T , IGP06N60T , IGP10N60T , IGP15N60T .
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