IGP30N60T Todos los transistores

 

IGP30N60T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGP30N60T
   Tipo de transistor: IGBT
   Código de marcado: G30T60
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 187 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 21 nS
   Coesⓘ - Capacitancia de salida, typ: 1087 pF
   Qgⓘ - Carga total de la puerta, typ: 167 nC
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

IGP30N60T Datasheet (PDF)

 ..1. Size:379K  infineon
igp30n60t.pdf pdf_icon

IGP30N60T

IGP30N60T TrenchStop Series IGW30N60TLow Loss IGBT in Trench and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight paramete

 6.1. Size:2105K  infineon
igp30n60h3.pdf pdf_icon

IGP30N60T

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGP30N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGP30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low turn-off energy low VCEsat low EMI maximum junctio

 6.2. Size:1611K  infineon
igp30n60h3 rev1 2g.pdf pdf_icon

IGP30N60T

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGP30N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGP30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G

 7.1. Size:1932K  infineon
igp30n65f5.pdf pdf_icon

IGP30N60T

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGP30N65F5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP30N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and resonant

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History: DIM1000XSM33-TS001 | DG75X07T2L | IGW40N65F5A

 

 
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History: DIM1000XSM33-TS001 | DG75X07T2L | IGW40N65F5A

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