Справочник IGBT. IGP30N60T

 

IGP30N60T - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IGP30N60T
   Тип транзистора: IGBT
   Маркировка: G30T60
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 187 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.5 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.7 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 21 nS
   Coesⓘ - Выходная емкость, типовая: 1087 pF
   Qgⓘ - Общий заряд затвора, typ: 167 nC
   Тип корпуса: TO220

 Аналог (замена) для IGP30N60T

 

 

IGP30N60T Datasheet (PDF)

 ..1. Size:379K  infineon
 igp30n60t.pdf

IGP30N60T IGP30N60T

IGP30N60T TrenchStop Series IGW30N60TLow Loss IGBT in Trench and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight paramete

 6.1. Size:2105K  infineon
 igp30n60h3.pdf

IGP30N60T IGP30N60T

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGP30N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGP30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low turn-off energy low VCEsat low EMI maximum junctio

 6.2. Size:1611K  infineon
 igp30n60h3 rev1 2g.pdf

IGP30N60T IGP30N60T

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGP30N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGP30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G

 7.1. Size:1932K  infineon
 igp30n65f5.pdf

IGP30N60T IGP30N60T

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGP30N65F5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP30N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed F5 technology offering Best-in-Class efficiency in hard switching and resonant

 7.2. Size:1929K  infineon
 igp30n65h5.pdf

IGP30N60T IGP30N60T

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyIGP30N65H5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP30N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologi

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