IGB10N60T Todos los transistores

 

IGB10N60T IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IGB10N60T

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 110 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 24 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 8 nS

Coesⓘ - Capacitancia de salida, typ: 40 pF

Encapsulados: TO263

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IGB10N60T datasheet

 ..1. Size:602K  infineon
 igb10n60t.pdf pdf_icon

IGB10N60T

IGB10N60T TRENCHSTOP Series p Low Loss IGBT IGBT in TRENCHSTOP and Fieldstop technology Features C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s Designed for frequency inverters for washing machines, fans, pumps and vacuum G cleaners E TRENCHSTOP technology for 600V applications offers

 ..2. Size:781K  infineon
 igb10n60t rev1 2g.pdf pdf_icon

IGB10N60T

IGB10N60T TrenchStop Series p Low Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners TrenchStop technology for 600 V applications offers - very tight

Otros transistores... IGD06N60T , IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IGW75N60T , CRG75T60AK3HD , IGP06N60T , IGP10N60T , IGP15N60T , IGP50N60T , AUIRG4BC30S-S , AUIRG4BC30S-SL , AUIRG4BC30U-S , AUIRG4BC30U-SL .

 

 

 


 
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