All IGBT. IGB10N60T Datasheet

 

IGB10N60T Datasheet and Replacement


   Type Designator: IGB10N60T
   Type: IGBT
   Marking Code: G10T60
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 110 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 24 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 8 nS
   Coesⓘ - Output Capacitance, typ: 40 pF
   Qg ⓘ - Total Gate Charge, typ: 62 nC
   Package: TO263
 

 IGB10N60T substitution

   - IGBT ⓘ Cross-Reference Search

 

IGB10N60T Datasheet (PDF)

 ..1. Size:602K  infineon
 igb10n60t.pdf pdf_icon

IGB10N60T

IGB10N60T TRENCHSTOP Series p Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology Features: C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and vacuum Gcleaners E TRENCHSTOP technology for 600V applications offers :

 ..2. Size:781K  infineon
 igb10n60t rev1 2g.pdf pdf_icon

IGB10N60T

IGB10N60T TrenchStop Series p Low Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners TrenchStop technology for 600 V applications offers : - very tight

Datasheet: IGD06N60T , IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IGW75N60T , TGD30N40P , IGP06N60T , IGP10N60T , IGP15N60T , IGP50N60T , AUIRG4BC30S-S , AUIRG4BC30S-SL , AUIRG4BC30U-S , AUIRG4BC30U-SL .

History: GT60J323

Keywords - IGB10N60T transistor datasheet

 IGB10N60T cross reference
 IGB10N60T equivalent finder
 IGB10N60T lookup
 IGB10N60T substitution
 IGB10N60T replacement

 

 
Back to Top

 


 
.