IGP06N60T Todos los transistores

 

IGP06N60T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGP06N60T
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 88 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 12 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 6 nS
   Coesⓘ - Capacitancia de salida, typ: 28 pF
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

IGP06N60T Datasheet (PDF)

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IGP06N60T

IGP06N60TTRENCHSTOP Series qLow Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technologyCFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s GE TRENCHSTOP and Fieldstop technology for 600V applications offers :- very tight parameter distribution- high ruggedness, temperature stable behavior

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IGP06N60T

IGP06N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G TrenchStop and Fieldstop technology for 600 V applications offers : E - very tight parameter distribution - high ruggedness, temper

Otros transistores... IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IGW75N60T , IGB10N60T , IRGP4066D , IGP10N60T , IGP15N60T , IGP50N60T , AUIRG4BC30S-S , AUIRG4BC30S-SL , AUIRG4BC30U-S , AUIRG4BC30U-SL , AUIRG4PH50S .

History: IGC50T120T8RL | IGC41T120T8Q | IGC189T120T8RL | IGC18T120T8Q | STGWT80H65DFB | T1800GB45A | DGW50N65CTL1

 

 
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