All IGBT. IGP06N60T Datasheet

 

IGP06N60T Datasheet and Replacement


   Type Designator: IGP06N60T
   Type: IGBT
   Marking Code: G06T60
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 88 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 12 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 6 nS
   Coesⓘ - Output Capacitance, typ: 28 pF
   Qgⓘ - Total Gate Charge, typ: 42 nC
   Package: TO220
      - IGBT Cross-Reference

 

IGP06N60T Datasheet (PDF)

 ..1. Size:489K  infineon
 igp06n60t.pdf pdf_icon

IGP06N60T

IGP06N60TTRENCHSTOP Series qLow Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technologyCFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s GE TRENCHSTOP and Fieldstop technology for 600V applications offers :- very tight parameter distribution- high ruggedness, temperature stable behavior

 0.1. Size:371K  infineon
 igp06n60trev2 2g.pdf pdf_icon

IGP06N60T

IGP06N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G TrenchStop and Fieldstop technology for 600 V applications offers : E - very tight parameter distribution - high ruggedness, temper

Datasheet: IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IGW75N60T , IGB10N60T , IRGP4066D , IGP10N60T , IGP15N60T , IGP50N60T , AUIRG4BC30S-S , AUIRG4BC30S-SL , AUIRG4BC30U-S , AUIRG4BC30U-SL , AUIRG4PH50S .

History: STGWT80H65DFB

Keywords - IGP06N60T transistor datasheet

 IGP06N60T cross reference
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