IGP06N60T PDF and Equivalents Search

 

IGP06N60T Specs and Replacement

Type Designator: IGP06N60T

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 88 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 12 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 6 nS

Coesⓘ - Output Capacitance, typ: 28 pF

Package: TO220

 IGP06N60T Substitution

- IGBT ⓘ Cross-Reference Search

 

IGP06N60T datasheet

 ..1. Size:489K  infineon
 igp06n60t.pdf pdf_icon

IGP06N60T

IGP06N60T TRENCHSTOP Series q Low Loss IGBT IGBT in TRENCHSTOP and Fieldstop technology C Features Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E TRENCHSTOP and Fieldstop technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior ... See More ⇒

 0.1. Size:371K  infineon
 igp06n60trev2 2g.pdf pdf_icon

IGP06N60T

IGP06N60T TrenchStop Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology Features C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G TrenchStop and Fieldstop technology for 600 V applications offers E - very tight parameter distribution - high ruggedness, temper... See More ⇒

Specs: IGB15N60T , SIW75N65G2L2A , IGP30N60T , BSM50GAL120DN2 , IGB50N60T , IGW50N60T , IGW75N60T , IGB10N60T , FGH75T65UPD , IGP10N60T , IGP15N60T , IGP50N60T , AUIRG4BC30S-S , AUIRG4BC30S-SL , AUIRG4BC30U-S , AUIRG4BC30U-SL , AUIRG4PH50S .

Keywords - IGP06N60T transistor spec

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