IRG4BC30FD-S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4BC30FD-S
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 100 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 31 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.59 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 26 nS
Coesⓘ - Capacitancia de salida, typ: 74 pF
Qgⓘ - Carga total de la puerta, typ: 51 nC
Paquete / Cubierta: D2PAK
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IRG4BC30FD-S Datasheet (PDF)
irg4bc30fd-s.pdf
PD - 96929IRG4BC30FD-SFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHCHYPERFAST DIODEVCES = 600VFeaturesVCE(on) typ. = 1.59V Fast: optimized for medium operating frequenciesG (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter@VGE = 15V, IC = 17AE parameter distribution and higher efficiency than Generation
irg4bc30fd.pdf
PD -91451BIRG4BC30FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighterG parameter distribution and hig
irg4bc30fd1.pdf
PD - 94773IRG4BC30FD1Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHCHYPERFAST DIODEVCES = 600VFeatures Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode).VCE(on) typ. = 1.59VG Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than@VGE = 15V, IC = 17A Generation 3.
irg4bc30f.pdf
D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.59VG parameter distribution and higher efficiency than Generation 3@VG
Otros transistores... IRG4BC15UD , IRG4BC15UD-L , IRG4BC15UD-S , IRG4BC20MD , IRG4BC20MD-S , IRG4BC20UD-S , IRG4BC20W-S , IRG4BC30FD1 , FGW75N60HD , IRG4BC30S-S , IRG4BC30U-S , IRG4BC40WL , IRG4BC40WS , IRG4BH20K-L , IRG4BH20K-S , IRG4IBC10UD , IRG4IBC30S .
Liste
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