IRG4BC30FD-S - параметры транзистора, его аналоги, Даташиты

IRG4BC30FD-S Datasheet (PDF)

..1. Size:1260K international rectifier
irg4bc30fd-s.pdf pdf_icon

PD - 96929IRG4BC30FD-SFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHCHYPERFAST DIODEVCES = 600VFeaturesVCE(on) typ. = 1.59V Fast: optimized for medium operating frequenciesG (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter@VGE = 15V, IC = 17AE parameter distribution and higher efficiency than Generation

4.1. Size:302K international rectifier
irg4bc30fd.pdf pdf_icon

PD -91451BIRG4BC30FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighterG parameter distribution and hig

4.2. Size:365K international rectifier
irg4bc30fd1.pdf pdf_icon

PD - 94773IRG4BC30FD1Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHCHYPERFAST DIODEVCES = 600VFeatures Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode).VCE(on) typ. = 1.59VG Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than@VGE = 15V, IC = 17A Generation 3.

5.1. Size:172K international rectifier
irg4bc30f.pdf pdf_icon

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.59VG parameter distribution and higher efficiency than Generation 3@VG

Другие IGBT... IRG4BC15UD , IRG4BC15UD-L , IRG4BC15UD-S , IRG4BC20MD , IRG4BC20MD-S , IRG4BC20UD-S , IRG4BC20W-S , IRG4BC30FD1 , FGW75N60HD , IRG4BC30S-S , IRG4BC30U-S , IRG4BC40WL , IRG4BC40WS , IRG4BH20K-L , IRG4BH20K-S , IRG4IBC10UD , IRG4IBC30S .