All IGBT. IRG4BC30FD-S Datasheet

 

IRG4BC30FD-S IGBT. Datasheet pdf. Equivalent


   Type Designator: IRG4BC30FD-S
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 31 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.59 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 26 nS
   Coesⓘ - Output Capacitance, typ: 74 pF
   Qgⓘ - Total Gate Charge, typ: 51 nC
   Package: D2PAK

 IRG4BC30FD-S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4BC30FD-S Datasheet (PDF)

 ..1. Size:1260K  international rectifier
 irg4bc30fd-s.pdf

IRG4BC30FD-S IRG4BC30FD-S

PD - 96929IRG4BC30FD-SFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHCHYPERFAST DIODEVCES = 600VFeaturesVCE(on) typ. = 1.59V Fast: optimized for medium operating frequenciesG (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter@VGE = 15V, IC = 17AE parameter distribution and higher efficiency than Generation

 4.1. Size:302K  international rectifier
 irg4bc30fd.pdf

IRG4BC30FD-S IRG4BC30FD-S

PD -91451BIRG4BC30FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighterG parameter distribution and hig

 4.2. Size:365K  international rectifier
 irg4bc30fd1.pdf

IRG4BC30FD-S IRG4BC30FD-S

PD - 94773IRG4BC30FD1Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHCHYPERFAST DIODEVCES = 600VFeatures Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode).VCE(on) typ. = 1.59VG Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than@VGE = 15V, IC = 17A Generation 3.

 5.1. Size:172K  international rectifier
 irg4bc30f.pdf

IRG4BC30FD-S IRG4BC30FD-S

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.59VG parameter distribution and higher efficiency than Generation 3@VG

Datasheet: IRG4BC15UD , IRG4BC15UD-L , IRG4BC15UD-S , IRG4BC20MD , IRG4BC20MD-S , IRG4BC20UD-S , IRG4BC20W-S , IRG4BC30FD1 , FGW75N60HD , IRG4BC30S-S , IRG4BC30U-S , IRG4BC40WL , IRG4BC40WS , IRG4BH20K-L , IRG4BH20K-S , IRG4IBC10UD , IRG4IBC30S .

 

 
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