IRG4PC60F Todos los transistores

 

IRG4PC60F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4PC60F

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 520

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.8

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 90

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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IRG4PC60F Datasheet (PDF)

1.1. irg4pc60f-p.pdf Size:118K _international_rectifier

IRG4PC60F
IRG4PC60F

PD - 94440 IRG4PC60F-P Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features Features Features Features Features VCES = 600V • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.50V G • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. @VGE = 15V, IC = 60A

1.2. irg4pc60f.pdf Size:221K _international_rectifier

IRG4PC60F
IRG4PC60F

PD - 94442A IRG4PC60F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency. • Industry standard TO-247AC package. @VGE = 15V, IC = 60A

 2.1. irg4pc60u.pdf Size:126K _international_rectifier

IRG4PC60F
IRG4PC60F

PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and VCES = 600V >200 kHz in resonant mode. • Application in UPS, Welding and High Current power VCE(on) typ. = 1.6V supply. G • Generation 4 IGBT design provides tighter parameter distribution and hig

2.2. irg4pc60upbf.pdf Size:231K _international_rectifier

IRG4PC60F
IRG4PC60F

PD - 95568 IRG4PC60UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating VCES = 600V frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.6V G parameter distribution and higher efficiency. • Industry standard TO-247AC package. @VGE = 15

 2.3. irg4pc60u-p.pdf Size:122K _international_rectifier

IRG4PC60F
IRG4PC60F

PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and VCES = 600V >200 kHz in resonant mode. • Application in UPS, Welding and High Current power VCE(on) typ. = 1.6V supply. G • Generation 4 IGBT design provides tighter parameter distribution and hig

Otros transistores... IRG4BC40WS , IRG4BH20K-L , IRG4BH20K-S , IRG4IBC10UD , IRG4IBC30S , IRG4PC20U , IRG4PC50F-E , IRG4PC50SD , G7N60C3D , IRG4PC60U , IRG4PH40UD2-E , IRG4PH50S-E , IRG4PSH71U , IRG4PSH71UD , IRG4RC20F , IRG6B330UD , IRG6I320U .

 

 
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