All IGBT. IRG4PC60F Datasheet

 

IRG4PC60F IGBT. Datasheet pdf. Equivalent

Type Designator: IRG4PC60F

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 520W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.80V

Maximum Collector Current |Ic|, A: 90A

Package: TO247

IRG4PC60F Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4PC60F Datasheet (PDF)

1.1. irg4pc60f.pdf Size:118K _international_rectifier

IRG4PC60F
IRG4PC60F

PD - 94442 IRG4PC60F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency. • Industry standard TO-247AC p

1.2. irg4pc60f-p.pdf Size:118K _international_rectifier

IRG4PC60F
IRG4PC60F

PD - 94440 IRG4PC60F-P Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features Features Features Features Features VCES = 600V • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.50V G • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. @VGE = 15V, IC = 60A E •

 1.3. irg4pc60f.pdf Size:221K _igbt_a

IRG4PC60F
IRG4PC60F

PD - 94442A IRG4PC60F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency. • Industry standard TO-247AC package. @VGE = 15V, IC = 60A

Datasheet: IRG4BC40WS , IRG4BH20K-L , IRG4BH20K-S , IRG4IBC10UD , IRG4IBC30S , IRG4PC20U , IRG4PC50F-E , IRG4PC50SD , G7N60C3D , IRG4PC60U , IRG4PH40UD2-E , IRG4PH50S-E , IRG4PSH71U , IRG4PSH71UD , IRG4RC20F , IRG6B330UD , IRG6I320U .

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