Справочник IGBT. IRG4PC60F

 

IRG4PC60F - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IRG4PC60F
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 520 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 90 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.5 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 66 nS
   Coesⓘ - Выходная емкость, типовая: 360 pF
   Qgⓘ - Общий заряд затвора, typ: 290 nC
   Тип корпуса: TO247

 Аналог (замена) для IRG4PC60F

 

 

IRG4PC60F Datasheet (PDF)

 ..1. Size:221K  international rectifier
 irg4pc60f.pdf

IRG4PC60F IRG4PC60F

PD - 94442AIRG4PC60FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.50VG parameter distribution and higher efficiency. Industry standard TO-247AC package.@VGE = 15V, IC = 60A

 0.1. Size:118K  international rectifier
 irg4pc60f-p.pdf

IRG4PC60F IRG4PC60F

PD - 94440IRG4PC60F-PFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORCFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 600V Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).VCE(on) typ. = 1.50VG Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.@VGE = 15V, IC = 60A

 6.1. Size:231K  international rectifier
 irg4pc60upbf.pdf

IRG4PC60F IRG4PC60F

PD - 95568IRG4PC60UPbFUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast: Optimized for high operatingVCES = 600V frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. Generation 4 IGBT design provides tighterVCE(on) typ. = 1.6VG parameter distribution and higher efficiency. Industry standard TO-247AC package.@VGE = 15

 6.2. Size:126K  international rectifier
 irg4pc60u.pdf

IRG4PC60F IRG4PC60F

PD - 94441IRG4PC60U-PINSULATED GATE BIPOLAR TRANSISTORUltraFast Speed IGBTFeatures C UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching andVCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current powerVCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig

 6.3. Size:122K  international rectifier
 irg4pc60u-p.pdf

IRG4PC60F IRG4PC60F

PD - 94441IRG4PC60U-PINSULATED GATE BIPOLAR TRANSISTORUltraFast Speed IGBTFeatures C UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching andVCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current powerVCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig

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