IRG4PC60F - аналоги, параметры транзистора - Справочник транзисторов

IRG4PC60F даташит

..1. Size:221K international rectifier
irg4pc60f.pdf pdf_icon

PD - 94442A IRG4PC60F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency. Industry standard TO-247AC package. @VGE = 15V, IC = 60A

0.1. Size:118K international rectifier
irg4pc60f-p.pdf pdf_icon

PD - 94440 IRG4PC60F-P Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features Features Features Features Features VCES = 600V Fast Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.50V G Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. @VGE = 15V, IC = 60A

6.1. Size:231K international rectifier
irg4pc60upbf.pdf pdf_icon

PD - 95568 IRG4PC60UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast Optimized for high operating VCES = 600V frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. Generation 4 IGBT design provides tighter VCE(on) typ. = 1.6V G parameter distribution and higher efficiency. Industry standard TO-247AC package. @VGE = 15

6.2. Size:126K international rectifier
irg4pc60u.pdf pdf_icon

PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C UltraFast Optimized for high operating frequencies up to 50 kHz in hard switching and VCES = 600V >200 kHz in resonant mode. Application in UPS, Welding and High Current power VCE(on) typ. = 1.6V supply. G Generation 4 IGBT design provides tighter parameter distribution and hig