IRG6I330U Todos los transistores

 

IRG6I330U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRG6I330U
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 43 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 330 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 28 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.3 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 32 nS
   Coesⓘ - Capacitancia de salida, typ: 108 pF
   Qgⓘ - Carga total de la puerta, typ: 86 nC
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

IRG6I330U Datasheet (PDF)

 ..1. Size:306K  international rectifier
 irg6i330u.pdf pdf_icon

IRG6I330U

PD - 96192AIRG6I330UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 28A1.30 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applications IRP max @ TC= 25C250 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl L

 8.1. Size:253K  international rectifier
 irg6i320u.pdf pdf_icon

IRG6I330U

PD - 97351AIRG6I320UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT Technologyl Optimized for Sustain and Energy RecoveryVCE(ON) typ. @ IC = 24A1.45 Vcircuits in PDP applicationsIRP max @ TC= 25C160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl

 9.1. Size:285K  international rectifier
 irg6ic30u.pdf pdf_icon

IRG6I330U

PD - 97386IRG6IC30UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min600 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 25A1.50 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applications IRP max @ TC= 25C 250 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl L

Otros transistores... IRG4PC60U-P , IRG4PH40UD2-E , IRG4PH50S-E , IRG4PSH71U , IRG4PSH71UD , IRG4RC20F , IRG6B330UD , IRG6I320U , RJP30H1DPD , IRG6IC30U , IRG6S320U , IRG6S330U , IRG7I313U , IRG7I319U , IRG7IA13U , IRG7IA19U , IRG7IC28U .

History: APT100GT120JU2 | HGTG27N60C3DR | APT44GA60S | AOD5B65M1

 

 
Back to Top

 


 
.