IRG6I330U Spec and Replacement
Type Designator: IRG6I330U
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 43 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 28 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 32 nS
Coesⓘ - Output Capacitance, typ: 108 pF
Package: TO220F
IRG6I330U Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRG6I330U specs
irg6i330u.pdf
PD - 96192A IRG6I330UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 28A 1.30 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 250 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l L... See More ⇒
irg6i320u.pdf
PD - 97351A IRG6I320UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 24A 1.45 V circuits in PDP applications IRP max @ TC= 25 C 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l ... See More ⇒
irg6ic30u.pdf
PD - 97386 IRG6IC30UPbF PDP TRENCH IGBT Key Parameters Features VCE min 600 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 25A 1.50 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 250 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l L... See More ⇒
Specs: IRG4PC60U-P , IRG4PH40UD2-E , IRG4PH50S-E , IRG4PSH71U , IRG4PSH71UD , IRG4RC20F , IRG6B330UD , IRG6I320U , SGT40N60NPFDPN , IRG6IC30U , IRG6S320U , IRG6S330U , IRG7I313U , IRG7I319U , IRG7IA13U , IRG7IA19U , IRG7IC28U .
Keywords - IRG6I330U transistor spec
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