IRG6I330U IGBT. Datasheet pdf. Equivalent
Type Designator: IRG6I330U
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 43 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 28 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 32 nS
Coesⓘ - Output Capacitance, typ: 108 pF
Package: TO220F
IRG6I330U Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRG6I330U Datasheet (PDF)
irg6i330u.pdf
PD - 96192AIRG6I330UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 28A1.30 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applications IRP max @ TC= 25C250 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl L
irg6i320u.pdf
PD - 97351AIRG6I320UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT Technologyl Optimized for Sustain and Energy RecoveryVCE(ON) typ. @ IC = 24A1.45 Vcircuits in PDP applicationsIRP max @ TC= 25C160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl
irg6ic30u.pdf
PD - 97386IRG6IC30UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min600 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 25A1.50 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applications IRP max @ TC= 25C 250 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl L
Datasheet: IRG4PC60U-P , IRG4PH40UD2-E , IRG4PH50S-E , IRG4PSH71U , IRG4PSH71UD , IRG4RC20F , IRG6B330UD , IRG6I320U , RJP30H1DPD , IRG6IC30U , IRG6S320U , IRG6S330U , IRG7I313U , IRG7I319U , IRG7IA13U , IRG7IA19U , IRG7IC28U .
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