IRG7I319U
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG7I319U
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 34
W
|Vce|ⓘ - Tensión máxima colector-emisor: 330
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.2
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 4.7
V
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 22
nS
Coesⓘ - Capacitancia de salida, typ: 57
pF
Qgⓘ - Carga total de la puerta, typ: 38
nC
Paquete / Cubierta:
TO220F
Búsqueda de reemplazo de IRG7I319U
- IGBT
IRG7I319U
Datasheet (PDF)
..1. Size:297K international rectifier
irg7i319u.pdf 
PD -96273PDP TRENCH IGBTIRG7I319UPbFKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 30A1.42 Vl Optimized for Sustain and Energy RecoveryIRP max @ TC= 25C170 Acircuits in PDP applicationsTJ max150 Cl Low VCE(on) and Energy per Pulse (EPULSETM)for improved panel efficiencyl High repetitive peak current capabilityCl
7.1. Size:203K international rectifier
irg7i313u.pdf
PD - 97411IRG7I313UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min330 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 20A1.35 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl L
9.1. Size:298K international rectifier
irg7ic30fd.pdf
IRG7IC30FDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE(on)VCES = 600V Zero VCE(on) temperature coefficient 3s Short Circuit CapabilityINOM = 24A Square RBSOAVCE(on) typ. = 1.60VBenefits G Benchmark Efficiency for Motor ControlApplicationsE tSC 3s, TJ(max) = 150C Rugged Transient Performance
9.2. Size:287K international rectifier
irg7ia19u.pdf
PD-96356PDP TRENCH IGBTIRG7IA19UPbFFeaturesKey ParametersVCE min360 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 30A1.49 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C170 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lea
9.3. Size:171K international rectifier
irg7ia13u.pdf
PD - 97636AIRG7IA13UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min360 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 20A1.42 Vl Optimized for Sustain and Energy RecoveryIRP max @ TC= 25Ccircuits in PDP applications 160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl L
9.4. Size:282K international rectifier
irg7ic28u.pdf
PD - 97562IRG7IC28UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min600 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 40A1.70 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C 225 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl
Otros transistores... IRG4RC20F
, IRG6B330UD
, IRG6I320U
, IRG6I330U
, IRG6IC30U
, IRG6S320U
, IRG6S330U
, IRG7I313U
, GT30F126
, IRG7IA13U
, IRG7IA19U
, IRG7IC28U
, IRG7P313U
, IRG7PA19U
, IRG7PC28U
, IRG7PH30K10
, IRG7PH30K10D
.
