IRG7I319U Datasheet. Specs and Replacement

Type Designator: IRG7I319U  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 34 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.2 V @25℃

tr ⓘ - Rise Time, typ: 22 nS

Coesⓘ - Output Capacitance, typ: 57 pF

Package: TO220F

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IRG7I319U datasheet

 ..1. Size:297K  international rectifier
 irg7i319u.pdf pdf_icon

IRG7I319U

PD -96273 PDP TRENCH IGBT IRG7I319UPbF Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 30A 1.42 V l Optimized for Sustain and Energy Recovery IRP max @ TC= 25 C 170 A circuits in PDP applications TJ max 150 C l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency l High repetitive peak current capability C l... See More ⇒

 7.1. Size:203K  international rectifier
 irg7i313u.pdf pdf_icon

IRG7I319U

PD - 97411 IRG7I313UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 20A 1.35 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l L... See More ⇒

 9.1. Size:298K  international rectifier
 irg7ic30fd.pdf pdf_icon

IRG7I319U

IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE(on) VCES = 600V Zero VCE(on) temperature coefficient 3 s Short Circuit Capability INOM = 24A Square RBSOA VCE(on) typ. = 1.60V Benefits G Benchmark Efficiency for Motor Control Applications E tSC 3 s, TJ(max) = 150 C Rugged Transient Performance ... See More ⇒

 9.2. Size:287K  international rectifier
 irg7ia19u.pdf pdf_icon

IRG7I319U

PD-96356 PDP TRENCH IGBT IRG7IA19UPbF Features Key Parameters VCE min 360 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 30A 1.49 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 170 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l Lea... See More ⇒

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Specs: IRG4RC20F, IRG6B330UD, IRG6I320U, IRG6I330U, IRG6IC30U, IRG6S320U, IRG6S330U, IRG7I313U, SGT40N60NPFDPN, IRG7IA13U, IRG7IA19U, IRG7IC28U, IRG7P313U, IRG7PA19U, IRG7PC28U, IRG7PH30K10, IRG7PH30K10D

Keywords - IRG7I319U transistor spec

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