IRG7I319U Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IRG7I319U Specs and Replacement

   Type Designator: IRG7I319U
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 34 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 330 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.7 V
   tr ⓘ - Rise Time, typ: 22 nS
   Coesⓘ - Output Capacitance, typ: 57 pF
   Qg ⓘ - Total Gate Charge, typ: 38 nC
   Package: TO220F

IRG7I319U Substitution

- IGBT ⓘ Cross-Reference Search

IRG7I319U datasheet

..1. Size:297K international rectifier
irg7i319u.pdf pdf_icon

PD -96273 PDP TRENCH IGBT IRG7I319UPbF Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 30A 1.42 V l Optimized for Sustain and Energy Recovery IRP max @ TC= 25 C 170 A circuits in PDP applications TJ max 150 C l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency l High repetitive peak current capability C l... See More ⇒

7.1. Size:203K international rectifier
irg7i313u.pdf pdf_icon

PD - 97411 IRG7I313UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 20A 1.35 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l L... See More ⇒

9.1. Size:298K international rectifier
irg7ic30fd.pdf pdf_icon

IRG7IC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE(on) VCES = 600V Zero VCE(on) temperature coefficient 3 s Short Circuit Capability INOM = 24A Square RBSOA VCE(on) typ. = 1.60V Benefits G Benchmark Efficiency for Motor Control Applications E tSC 3 s, TJ(max) = 150 C Rugged Transient Performance ... See More ⇒

9.2. Size:287K international rectifier
irg7ia19u.pdf pdf_icon

PD-96356 PDP TRENCH IGBT IRG7IA19UPbF Features Key Parameters VCE min 360 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 30A 1.49 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 170 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l Lea... See More ⇒