IRG7PH42UD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG7PH42UD

Tipo de transistor: IGBT + Diode

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 320 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 85 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V

trⓘ - Tiempo de subida, typ: 32 nS

Coesⓘ - Capacitancia de salida, typ: 124 pF

Qgⓘ - Carga total de la puerta, typ: 157 nC

Encapsulados: TO247

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IRG7PH42UD datasheet

 ..1. Size:435K  international rectifier
 irg7ph42ud.pdf pdf_icon

IRG7PH42UD

PD - 97391B IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH42UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diod

 0.1. Size:435K  international rectifier
 irg7ph42ud-ep.pdf pdf_icon

IRG7PH42UD

PD - 97391B IRG7PH42UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH42UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient G TJ(max) = 150 C Ultra fast soft recovery co-pak diod

 0.2. Size:1498K  international rectifier
 irg7ph42udpbf.pdf pdf_icon

IRG7PH42UD

 0.3. Size:283K  international rectifier
 irg7ph42ud1m.pdf pdf_icon

IRG7PH42UD

IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C Low VCE (ON) trench IGBT technology VCES = 1200V Low switching losses Square RBSOA IC = 45A, TC = 100 C Ultra-low VF Diode TJ(max) = 150 C 1300Vpk repetitive transient capacity G 100% of the parts tested for ILM VCE

MOSTRAR MÁS

Otros transistores... IRG7PA19U, IRG7PC28U, IRG7PH30K10, IRG7PH30K10D, IRG7PH35U, IRG7PH35UD, IRG7PH35UD1, IRG7PH42U, GT30G124, IRG7PH42UD1, IRG7PH46U, IRG7PH46UD, IRG7PH50U, IRG7PH50U-EP, IRG7PSH50UD, IRG7PSH73K10, IRG7R313U