All IGBT. IRG7PH42UD Datasheet

 

IRG7PH42UD IGBT. Datasheet pdf. Equivalent

Type Designator: IRG7PH42UD

Type: IGBT

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 320

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Collector Current |Ic| @25℃, A: 85

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2

Package: TO247

IRG7PH42UD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG7PH42UD Datasheet (PDF)

 ..1. Size:435K  international rectifier
 irg7ph42ud.pdf

IRG7PH42UD IRG7PH42UD

PD - 97391BIRG7PH42UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH42UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diod

 0.1. Size:435K  international rectifier
 irg7ph42ud-ep.pdf

IRG7PH42UD IRG7PH42UD

PD - 97391BIRG7PH42UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH42UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientG TJ(max) = 150C Ultra fast soft recovery co-pak diod

 0.2. Size:331K  international rectifier
 irg7ph42ud1.pdf

IRG7PH42UD IRG7PH42UD

IRG7PH42UD1PbFIRG7PH42UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA I NOMINAL = 30A Ultra-low VF DiodeG 1300Vpk repetitive transient capacityTJ(max) = 150C 100% of the parts tested for IL

 0.3. Size:283K  international rectifier
 irg7ph42ud1m.pdf

IRG7PH42UD IRG7PH42UD

IRG7PH42UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAIC = 45A, TC = 100C Ultra-low VF DiodeTJ(max) = 150C 1300Vpk repetitive transient capacityG 100% of the parts tested for ILM VCE

 0.4. Size:1498K  infineon
 irg7ph42udpbf.pdf

IRG7PH42UD IRG7PH42UD

Datasheet: IRG7PA19U , IRG7PC28U , IRG7PH30K10 , IRG7PH30K10D , IRG7PH35U , IRG7PH35UD , IRG7PH35UD1 , IRG7PH42U , NGD8201N , IRG7PH42UD1 , IRG7PH46U , IRG7PH46UD , IRG7PH50U , IRG7PH50U-E , IRG7PSH50UD , IRG7PSH73K10 , IRG7R313U .

 

 
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