IRG7R313U Todos los transistores

 

IRG7R313U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG7R313U

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 78

Tensión colector-emisor (Vce): 330

Voltaje de saturación colector-emisor (Vce sat): 1.35

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 40

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: D-Pak

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IRG7R313U Datasheet (PDF)

1.1. irg7r313u.pdf Size:237K _international_rectifier

IRG7R313U
IRG7R313U

PD - 97484 IRG7R313UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.35 V circuits in PDP applications IRP max @ TC= 25°C 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 °C for improved panel efficiency l High repetitive peak current capability l Lead

5.1. irg7rc07sd.pdf Size:300K _international_rectifier

IRG7R313U
IRG7R313U

PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features C • Standard speed IGBT for switching frequency less than 1KHz VCES = 600V • Very low VCE (ON) • Ultra fast soft recovery diode IC = 8.5A, TC = 100°C G VCE(on) typ. =1.2V@IC = 3A Benefits E • High efficiency for line frequency applications n-channel • Higher reliability from r

5.2. irg7rc10fd.pdf Size:342K _international_rectifier

IRG7R313U
IRG7R313U

PD - 97759 IRG7RC10FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE IC = 9.0A, TC = 100°C Features • Low VCE(on) tsc > 3μs, Tjmax = 150°C G • Zero VCE(on) temperature coefficient • 3µs Short Circuit Capability VCE(on) typ. = 1.6V E • Ultra Fast Soft Recovery Co-pak Diode @ IC = 5A • Square RBSOA n-channel Benefits • Ben

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