IRG7SC28U Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG7SC28U  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 171 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 35 nS

Coesⓘ - Capacitancia de salida, typ: 75 pF

Encapsulados: D2PAK

  📄📄 Copiar 

 Búsqueda de reemplazo de IRG7SC28U IGBT

- Selecciónⓘ de transistores por parámetros

 

IRG7SC28U datasheet

 ..1. Size:213K  international rectifier
 irg7sc28u.pdf pdf_icon

IRG7SC28U

PD - 97569A PDP TRENCH IGBT IRG7SC28UPbF Key Parameters Features VCE min 600 V l Advanced Trench IGBT Technology VCE(ON) typ. @ IC = 40A 1.70 V l Optimized for Sustain and Energy Recovery circuits in PDP applications IRP max @ TC= 25 C 225 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l

 8.1. Size:252K  international rectifier
 irg7sc12f.pdf pdf_icon

IRG7SC28U

PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR C Features VCES = 600V Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 C IC = 8A, TC = 100 C 3 S short circuit SOA Square RBSOA G tSC 3 s, TJ(max) = 150 C Positive VCE (ON) Temperature co-efficient E Tight parameter distribution VCE(on) typ. = 1.60V Lead Free Pac

 9.1. Size:244K  international rectifier
 irg7s319u.pdf pdf_icon

IRG7SC28U

PD - 97155 IRG7S319UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.26 V circuits in PDP applications IRP max @ TC= 25 C 170 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l Lead

 9.2. Size:244K  international rectifier
 irg7s313u.pdf pdf_icon

IRG7SC28U

PD - 97402A IRG7S313UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.35 V circuits in PDP applications IRP max @ TC= 25 C 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l Lead

MOSTRAR MÁS

Otros transistores... IRG7PH50U, IRG7PH50U-EP, IRG7PSH50UD, IRG7PSH73K10, IRG7R313U, IRG7S313U, IRG7S319U, IRG7SC12F, SGH80N60UFD, IRGB10B60KD, IRGB14C40L, IRGB15B60KD, IRGB20B60PD1, IRGB30B60K, IRGB4045D, IRGB4056D, IRGB4059D