IRG7SC28U Todos los transistores

 

IRG7SC28U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG7SC28U

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 171

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.95

Corriente del colector DC máxima (Ic): 60

Empaquetado / Estuche: D2PAK

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IRG7SC28U Datasheet (PDF)

0.1. irg7sc28u.pdf Size:213K _international_rectifier

IRG7SC28U
IRG7SC28U

PD - 97569APDP TRENCH IGBTIRG7SC28UPbFKey ParametersFeaturesVCE min600 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 40A1.70 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C 225 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl

8.1. irg7sc12f.pdf Size:252K _international_rectifier

IRG7SC28U
IRG7SC28U

PD - 96363IRG7SC12FPbFINSULATED GATE BIPOLAR TRANSISTORCFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 CIC = 8A, TC = 100C 3 S short circuit SOA Square RBSOA GtSC 3s, TJ(max) = 150C Positive VCE (ON) Temperature co-efficientE Tight parameter distributionVCE(on) typ. = 1.60V Lead Free Pac

 9.1. irg7s313u.pdf Size:244K _international_rectifier

IRG7SC28U
IRG7SC28U

PD - 97402AIRG7S313UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min 330 Vl Advanced Trench IGBT Technologyl Optimized for Sustain and Energy RecoveryVCE(ON) typ. @ IC = 20A 1.35 Vcircuits in PDP applicationsIRP max @ TC= 25C 160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max 150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lead

9.2. irg7s319u.pdf Size:244K _international_rectifier

IRG7SC28U
IRG7SC28U

PD - 97155IRG7S319UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min 330 Vl Advanced Trench IGBT Technologyl Optimized for Sustain and Energy RecoveryVCE(ON) typ. @ IC = 20A 1.26 Vcircuits in PDP applicationsIRP max @ TC= 25C 170 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max 150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lead

Otros transistores... IRG7PH50U , IRG7PH50U-E , IRG7PSH50UD , IRG7PSH73K10 , IRG7R313U , IRG7S313U , IRG7S319U , IRG7SC12F , IRG4PH50UD , IRGB10B60KD , IRGB14C40L , IRGB15B60KD , IRGB20B60PD1 , IRGB30B60K , IRGB4045D , IRGB4056D , IRGB4059D .

 

 
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