IRG7SC28U IGBT. Datasheet pdf. Equivalent
Type Designator: IRG7SC28U
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 171
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 30
Maximum Collector Current |Ic| @25℃, A: 60
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
Maximum G-E Threshold Voltag |VGE(th)|, V: 4.7
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 35
Collector Capacity (Cc), typ, pF: 75
Total Gate Charge (Qg), typ, nC: 70
Package: D2PAK
IRG7SC28U Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRG7SC28U Datasheet (PDF)
irg7sc28u.pdf
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PD - 97569APDP TRENCH IGBTIRG7SC28UPbFKey ParametersFeaturesVCE min600 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 40A1.70 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C 225 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl
irg7sc12f.pdf
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PD - 96363IRG7SC12FPbFINSULATED GATE BIPOLAR TRANSISTORCFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 CIC = 8A, TC = 100C 3 S short circuit SOA Square RBSOA GtSC 3s, TJ(max) = 150C Positive VCE (ON) Temperature co-efficientE Tight parameter distributionVCE(on) typ. = 1.60V Lead Free Pac
irg7s319u.pdf
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PD - 97155IRG7S319UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min 330 Vl Advanced Trench IGBT Technologyl Optimized for Sustain and Energy RecoveryVCE(ON) typ. @ IC = 20A 1.26 Vcircuits in PDP applicationsIRP max @ TC= 25C 170 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max 150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lead
irg7s313u.pdf
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PD - 97402AIRG7S313UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min 330 Vl Advanced Trench IGBT Technologyl Optimized for Sustain and Energy RecoveryVCE(ON) typ. @ IC = 20A 1.35 Vcircuits in PDP applicationsIRP max @ TC= 25C 160 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max 150 Cfor improved panel efficiencyl High repetitive peak current capabilityl Lead
Datasheet: IRG7PH50U , IRG7PH50U-EP , IRG7PSH50UD , IRG7PSH73K10 , IRG7R313U , IRG7S313U , IRG7S319U , IRG7SC12F , IKW30N60H3 , IRGB10B60KD , IRGB14C40L , IRGB15B60KD , IRGB20B60PD1 , IRGB30B60K , IRGB4045D , IRGB4056D , IRGB4059D .
![IRG7SC28U](https://alltransistors.com/images/us.png)
![IRG7SC28U](https://alltransistors.com/images/es.png)
![IRG7SC28U](https://alltransistors.com/images/ru.png)
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