IRGB6B60KD Todos los transistores

 

IRGB6B60KD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRGB6B60KD
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 90 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 13 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 17 nS
   Coesⓘ - Capacitancia de salida, typ: 34 pF
   Paquete / Cubierta: TO220AB
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IRGB6B60KD Datasheet (PDF)

 ..1. Size:311K  international rectifier
 irgb6b60kd.pdf pdf_icon

IRGB6B60KD

PD - 94381EIRGB6B60KDIRGS6B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL6B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 7.0A, TC=100C 10s Short Circuit Capability. Square RBSOA.G Ultrasoft Diode Reverse Recovery Characteristics.tsc > 10s, TJ=150C Positive VCE (

 5.1. Size:249K  international rectifier
 irgb6b60k.pdf pdf_icon

IRGB6B60KD

PD - 94575AIRGB6B60KIRGS6B60KINSULATED GATE BIPOLAR TRANSISTORIRGSL6B60KCVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability.IC = 7.0A, TC=100C Square RBSOA. Positive VCE (on) Temperature Coefficient.Gtsc > 10s, TJ=150CEVCE(on) typ. = 1.8Vn-channelBenefits Benchmark Efficiency for Motor Con

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History: SGTP5T60SD1S | HMG60N60A | SME6G5US120 | AU40N120T3A2 | IXGY2N120 | STGWT60H60DLFB

 

 
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