All IGBT. IRGB6B60KD Datasheet

 

IRGB6B60KD Datasheet and Replacement


   Type Designator: IRGB6B60KD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 90 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 13 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 34 pF
   Qg ⓘ - Total Gate Charge, typ: 18.2 nC
   Package: TO220AB
 

 IRGB6B60KD substitution

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IRGB6B60KD Datasheet (PDF)

 ..1. Size:311K  international rectifier
 irgb6b60kd.pdf pdf_icon

IRGB6B60KD

PD - 94381EIRGB6B60KDIRGS6B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL6B60KDULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF.IC = 7.0A, TC=100C 10s Short Circuit Capability. Square RBSOA.G Ultrasoft Diode Reverse Recovery Characteristics.tsc > 10s, TJ=150C Positive VCE (

 5.1. Size:249K  international rectifier
 irgb6b60k.pdf pdf_icon

IRGB6B60KD

PD - 94575AIRGB6B60KIRGS6B60KINSULATED GATE BIPOLAR TRANSISTORIRGSL6B60KCVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability.IC = 7.0A, TC=100C Square RBSOA. Positive VCE (on) Temperature Coefficient.Gtsc > 10s, TJ=150CEVCE(on) typ. = 1.8Vn-channelBenefits Benchmark Efficiency for Motor Con

Datasheet: IRGB4061D , IRGB4062D , IRGB4064D , IRGB4086 , IRGB4B60K , IRGB4B60KD1 , IRGB5B120KD , IRGB6B60K , GT30G122 , IRGB8B60K , IRGI4086 , IRGI4090 , IRGIB10B60KD1 , IRGIB15B60KD1 , IRGIB6B60KD , IRGIB7B60KD , IRGP20B120UD-E .

History: TGHP75N120FDR

Keywords - IRGB6B60KD transistor datasheet

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