IRGIB15B60KD1 Todos los transistores

 

IRGIB15B60KD1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRGIB15B60KD1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 52 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 19 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 25 nS
   Coesⓘ - Capacitancia de salida, typ: 100 pF
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

IRGIB15B60KD1 Datasheet (PDF)

 ..1. Size:282K  international rectifier
 irgib15b60kd1.pdf pdf_icon

IRGIB15B60KD1

PD- 94599AIRGIB15B60KD1INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 12A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffici

 0.1. Size:382K  international rectifier
 irgib15b60kd1p.pdf pdf_icon

IRGIB15B60KD1

PD- 94914IRGIB15B60KD1PINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 12A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffici

 8.1. Size:392K  international rectifier
 irgib10b60kd1p.pdf pdf_icon

IRGIB15B60KD1

IRGIB10B60KD1PINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 10A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient.E

 8.2. Size:384K  international rectifier
 irgib10b60kd1.pdf pdf_icon

IRGIB15B60KD1

PD-94576AIRGIB10B60KD1INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 10A, TC=100C Low Diode VF. 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficie

MOSTRAR MÁS

Otros transistores... IRGB4B60KD1 , IRGB5B120KD , IRGB6B60K , IRGB6B60KD , IRGB8B60K , IRGI4086 , IRGI4090 , IRGIB10B60KD1 , STGW60V60DF , IRGIB6B60KD , IRGIB7B60KD , IRGP20B120UD-E , IRGP20B120U-E , IRGP20B60PD , IRGP30B120KD-E , IRGP30B60KD-E , IRGP35B60PD .

History: APT15GP90BG | APT27GA90SD15 | SG40T120DB | OST75N65HSMF | IRGP4063D1 | IRGC100B60UB | SGM50HF12A1TFDT4

 

 
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