IRGIB15B60KD1 - аналоги, параметры транзистора

IRGIB15B60KD1 даташит

..1. Size:282K international rectifier
irgib15b60kd1.pdf pdf_icon

PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 12A, TC=100 C Low Diode VF. 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffici

0.1. Size:382K international rectifier
irgib15b60kd1p.pdf pdf_icon

PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 12A, TC=100 C Low Diode VF. 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffici

8.1. Size:392K international rectifier
irgib10b60kd1p.pdf pdf_icon

8.2. Size:384K international rectifier
irgib10b60kd1.pdf pdf_icon

PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (on) Non Punch Through IGBT Technology. IC = 10A, TC=100 C Low Diode VF. 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficie

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