All IGBT. IRGIB15B60KD1 Datasheet

 

IRGIB15B60KD1 IGBT. Datasheet pdf. Equivalent

Type Designator: IRGIB15B60KD1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 52

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.8

Maximum Collector Current |Ic|, A: 19

Package: TO220_FullPak

IRGIB15B60KD1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGIB15B60KD1 Datasheet (PDF)

0.1. irgib15b60kd1.pdf Size:282K _international_rectifier

IRGIB15B60KD1 IRGIB15B60KD1

PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. IC = 12A, TC=100°C • Low Diode VF. • 10µs Short Circuit Capability. G • Square RBSOA. tsc > 10µs, TJ=150°C • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coeffici

8.1. irgib10b60kd1.pdf Size:384K _international_rectifier

IRGIB15B60KD1 IRGIB15B60KD1

PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. IC = 10A, TC=100°C • Low Diode VF. • 10µs Short Circuit Capability. G • Square RBSOA. tsc > 10µs, TJ=150°C • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficie

 9.1. irgib6b60kd.pdf Size:277K _international_rectifier

IRGIB15B60KD1 IRGIB15B60KD1

PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features IC = 6.0A, TC=90°C • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. G • 10µs Short Circuit Capability. tsc > 10µs, TJ=175°C • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. E • Positive VCE (on) Temperature Coeffici

9.2. irgib7b60kd.pdf Size:439K _international_rectifier

IRGIB15B60KD1 IRGIB15B60KD1

PD - 94620B IRGIB7B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. IC = 8.0A, TC=100°C • 10µs Short Circuit Capability. G • Square RBSOA. tsc > 10µs, TJ=150°C • Positive VCE (on) Temperature Coefficient. E • Maximum Junction Temperature rated at 175°C. VCE(on) typ. =

Datasheet: IRGB4B60KD1 , IRGB5B120KD , IRGB6B60K , IRGB6B60KD , IRGB8B60K , IRGI4086 , IRGI4090 , IRGIB10B60KD1 , SGH80N60UFD , IRGIB6B60KD , IRGIB7B60KD , IRGP20B120UD-E , IRGP20B120U-E , IRGP20B60PD , IRGP30B120KD-E , IRGP30B60KD-E , IRGP35B60PD .

 

 
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