GT50S101 Todos los transistores

 

GT50S101 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GT50S101
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1400 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 300 nS
   Paquete / Cubierta: TO264
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GT50S101 Datasheet (PDF)

 ..1. Size:144K  toshiba
 gt50s101.pdf pdf_icon

GT50S101

 9.1. Size:185K  apt
 aptgt50sk120d1.pdf pdf_icon

GT50S101

APTGT50SK120D1 VCES = 1200V Buck chopper IC = 50A @ Tc = 80C Trench IGBT Power Module Application 3Q1 AC and DC motor control Switched Mode Power Supplies 4Features 5 Trench + Field Stop IGBT Technology 1- Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF 2- Low leakage

 9.2. Size:185K  apt
 aptgt50sk170d1.pdf pdf_icon

GT50S101

APTGT50SK170D1 VCES = 1700V Buck chopper IC = 50A @ Tc = 80C Trench IGBT Power Module Application AC and DC motor control 3 Switched Mode Power Supplies Features Trench + Field Stop IGBT Technology - Low voltage drop 1Q2- Low tail current - Switching frequency up to 20 kHz 6- Soft recovery parallel diodes - Low diode VF 7- Low leakage cur

Otros transistores... GT50G102 , GT50J101 , GT50J102 , GT50J301 , GT50J322 , GT50L101 , GT50M101 , GT50Q101 , IHW20N135R5 , GT50T101 , GT5G101 , GT5G102 , GT5G102LB , GT5G103 , GT5G103LB , GT60J101 , GT60M101 .

History: 7MBR75VB060-50 | CM600DXL-24S | CM100RL-24NF | CM50YE13-12H | DM2G150SH6NE | IGW75N65H5 | MMG200D120B6UC

 

 
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