GT50S101 Specs and Replacement
Type Designator: GT50S101
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
Package: TO264
GT50S101 Substitution - IGBT ⓘ Cross-Reference Search
GT50S101 datasheet
aptgt50sk120d1.pdf
APTGT50SK120D1 VCES = 1200V Buck chopper IC = 50A @ Tc = 80 C Trench IGBT Power Module Application 3 Q1 AC and DC motor control Switched Mode Power Supplies 4 Features 5 Trench + Field Stop IGBT Technology 1 - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF 2 - Low leakage ... See More ⇒
aptgt50sk170d1.pdf
APTGT50SK170D1 VCES = 1700V Buck chopper IC = 50A @ Tc = 80 C Trench IGBT Power Module Application AC and DC motor control 3 Switched Mode Power Supplies Features Trench + Field Stop IGBT Technology - Low voltage drop 1 Q2 - Low tail current - Switching frequency up to 20 kHz 6 - Soft recovery parallel diodes - Low diode VF 7 - Low leakage cur... See More ⇒
Specs: GT50G102, GT50J101, GT50J102, GT50J301, GT50J322, GT50L101, GT50M101, GT50Q101, IHW20N135R5, GT50T101, GT5G101, GT5G102, GT5G102LB, GT5G103, GT5G103LB, GT60J101, GT60M101
Keywords - GT50S101 transistor spec
GT50S101 cross reference
GT50S101 equivalent finder
GT50S101 lookup
GT50S101 substitution
GT50S101 replacement
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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