All IGBT. GT50S101 Datasheet

 

GT50S101 IGBT. Datasheet pdf. Equivalent


   Type Designator: GT50S101
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 300 nS
   Package: TO264

 GT50S101 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT50S101 Datasheet (PDF)

 ..1. Size:144K  toshiba
 gt50s101.pdf

GT50S101 GT50S101

 9.1. Size:185K  apt
 aptgt50sk120d1.pdf

GT50S101 GT50S101

APTGT50SK120D1 VCES = 1200V Buck chopper IC = 50A @ Tc = 80C Trench IGBT Power Module Application 3Q1 AC and DC motor control Switched Mode Power Supplies 4Features 5 Trench + Field Stop IGBT Technology 1- Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF 2- Low leakage

 9.2. Size:185K  apt
 aptgt50sk170d1.pdf

GT50S101 GT50S101

APTGT50SK170D1 VCES = 1700V Buck chopper IC = 50A @ Tc = 80C Trench IGBT Power Module Application AC and DC motor control 3 Switched Mode Power Supplies Features Trench + Field Stop IGBT Technology - Low voltage drop 1Q2- Low tail current - Switching frequency up to 20 kHz 6- Soft recovery parallel diodes - Low diode VF 7- Low leakage cur

Datasheet: GT50G102 , GT50J101 , GT50J102 , GT50J301 , GT50J322 , GT50L101 , GT50M101 , GT50Q101 , GT30F126 , GT50T101 , GT5G101 , GT5G102 , GT5G102LB , GT5G103 , GT5G103LB , GT60J101 , GT60M101 .

 

 
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