GT50T101 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GT50T101
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 150 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1500 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 5.5(max) V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
Paquete / Cubierta: TO264
Búsqueda de reemplazo de GT50T101 - IGBT
GT50T101 Datasheet (PDF)
rgt50ts65d.pdf
RGT50TS65D 650V 25A Field Stop Trench IGBT Data SheetlOutline TO-247NVCES650VIC(100C)25AVCE(sat) (Typ.)1.65VPD174W(1)(2)(3) lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2) (1) Gate 2) Low Switching Loss(2) Collector *1 3) Short Circuit Withstand Time 5s(3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD*1 Built i
vs-gt50tp60n.pdf
VS-GT50TP60Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 600 V, 50 AFEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Di
vs-gt50tp120n.pdf
VS-GT50TP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 2 in 1 Package, 1200 V, 50 AFEATURES Low VCE(on) trench IGBT technology Low switching losses 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD
aptgt50ta170p.pdf
APTGT50TA170P Triple phase leg VCES = 1700V Trench IGBT Power Module IC = 50A @ Tc = 80C Application VBUS1 VBUS2 VBUS3 Welding converters Switched Mode Power Supplies G1 G3 G5 Uninterruptible Power Supplies Motor control E1 E3 E5 U V WFeatures Trench + Field Stop IGBT Technology G2 G4 G6 - Low voltage drop - Low tail current - Switchi
aptgt50tdu170p.pdf
APTGT50TDU170P Triple Dual Common Source VCES = 1700V Trench IGBT Power Module IC = 50A @ Tc = 80C C1 C3 C5Application AC Switches G1 G3 G5 Switched Mode Power Supplies Uninterruptible Power Supplies E1 E3 E5E1/E2 E3/E4 E5/E6 Features Trench + Field Stop IGBT Technology E2 E4 E6- Low voltage drop - Low tail current - Switching frequency up
sgt50t65fd1pn sgt50t65fd1p7.pdf
SGT50T65FD1PN/P7 50A650V C2SGT50T65FD1PN/P7 1Field Stop IVGUPS,SMPS PFC 3 E 50A650VVCE(sat)( )=2.0
sgt50t65fd1pn sgt50t65fd1p7 sgt50t65fd1ps sgt50t65fd1pt.pdf
SGT50T65FD1PN/P7/PS/PT 50A650V C 2SGT50T65FD1PN/P7/PS/PT 1GField Stop IVUPSSMPS PFC 312TO-3P3E
sgt50t65sdm1p7.pdf
SGT50T65SDM1P7 50A650V C2SGT50T65SDM1P7 1Field Stop IIIG UPSSMPS PFC 3E 50A650VVCE(sat)( )=1.65V@IC=50A
sgt50t65fd1p7 sgt50t65fd1pn sgt50t65fd1ps sgt50t65fd1pt.pdf
SGT50T65FD1PN/P7/PS/PT 50A650V C 2SGT50T65FD1PN/P7/PS/PT 1GField Stop IVUPSSMPS PFC 312TO-3P3E
Otros transistores... GT50J101 , GT50J102 , GT50J301 , GT50J322 , GT50L101 , GT50M101 , GT50Q101 , GT50S101 , TGAN60N60F2DS , GT5G101 , GT5G102 , GT5G102LB , GT5G103 , GT5G103LB , GT60J101 , GT60M101 , GT60M102 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2