GT50T101 - аналоги и описание IGBT

RGT50TS65D 650V 25A Field Stop Trench IGBT Data Sheet lOutline TO-247N VCES 650V IC(100 C) 25A VCE(sat) (Typ.) 1.65V PD 174W (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built i

VS-GT50TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 50 A FEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Di

APTGT50TA170P Triple phase leg VCES = 1700V Trench IGBT Power Module IC = 50A @ Tc = 80 C Application VBUS1 VBUS2 VBUS3 Welding converters Switched Mode Power Supplies G1 G3 G5 Uninterruptible Power Supplies Motor control E1 E3 E5 U V W Features Trench + Field Stop IGBT Technology G2 G4 G6 - Low voltage drop - Low tail current - Switchi

APTGT50TDU170P Triple Dual Common Source VCES = 1700V Trench IGBT Power Module IC = 50A @ Tc = 80 C C1 C3 C5 Application AC Switches G1 G3 G5 Switched Mode Power Supplies Uninterruptible Power Supplies E1 E3 E5 E1/E2 E3/E4 E5/E6 Features Trench + Field Stop IGBT Technology E2 E4 E6 - Low voltage drop - Low tail current - Switching frequency up

SGT50T65FD1PN/P7 50A 650V C 2 SGT50T65FD1PN/P7 1 Field Stop IV G UPS,SMPS PFC 3 E 50A 650V VCE(sat)( )=2.0

SGT50T65SDM1P7 50A 650V C 2 SGT50T65SDM1P7 1 Field Stop III G UPS SMPS PFC 3 E 50A 650V VCE(sat)( )=1.65V@IC=50A