GT50T101 Specs and Replacement
Type Designator: GT50T101
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1500 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5.5(max) V @25℃
Package: TO264
GT50T101 Substitution - IGBT ⓘ Cross-Reference Search
GT50T101 datasheet
rgt50ts65d.pdf
RGT50TS65D 650V 25A Field Stop Trench IGBT Data Sheet lOutline TO-247N VCES 650V IC(100 C) 25A VCE(sat) (Typ.) 1.65V PD 174W (1)(2)(3) lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate 2) Low Switching Loss (2) Collector *1 3) Short Circuit Withstand Time 5 s (3) Emitter (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built i... See More ⇒
vs-gt50tp60n.pdf
VS-GT50TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 50 A FEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Di... See More ⇒
Specs: GT50J101, GT50J102, GT50J301, GT50J322, GT50L101, GT50M101, GT50Q101, GT50S101, RJH30E2DPP, GT5G101, GT5G102, GT5G102LB, GT5G103, GT5G103LB, GT60J101, GT60M101, GT60M102
Keywords - GT50T101 transistor spec
GT50T101 cross reference
GT50T101 equivalent finder
GT50T101 lookup
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GT50T101 replacement
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