GT50T101 Datasheet and Replacement
Type Designator: GT50T101
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1500 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 5.5(max) V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
Package: TO264
- IGBT Cross-Reference
GT50T101 Datasheet (PDF)
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vs-gt50tp120n.pdf

VS-GT50TP120Nwww.vishay.comVishay SemiconductorsMolding Type Module IGBT, 2 in 1 Package, 1200 V, 50 AFEATURES Low VCE(on) trench IGBT technology Low switching losses 10 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD
Datasheet: GT50J101 , GT50J102 , GT50J301 , GT50J322 , GT50L101 , GT50M101 , GT50Q101 , GT50S101 , SGT40N60FD2PN , GT5G101 , GT5G102 , GT5G102LB , GT5G103 , GT5G103LB , GT60J101 , GT60M101 , GT60M102 .
History: IRGP6660D | AOB10B65M1 | RJP60V0DPM | MG300N1US1 | GT10G101 | CM150DU-12H | 6MBP400VEA060-50
Keywords - GT50T101 transistor datasheet
GT50T101 cross reference
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History: IRGP6660D | AOB10B65M1 | RJP60V0DPM | MG300N1US1 | GT10G101 | CM150DU-12H | 6MBP400VEA060-50



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