IRGP4069 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGP4069
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 268 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 76 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
Coesⓘ - Capacitancia de salida, typ: 197 pF
Qgⓘ - Carga total de la puerta, typ: 69 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IRGP4069 - IGBT
IRGP4069 Datasheet (PDF)
irgp4069.pdf
PD - 97426IRGP4069PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4069-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOA GtSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILME Positive VCE (ON) Temperature Coefficient
irgp4069d-e.pdf
PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv
irgp4069d.pdf
PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv
irgp4069-e.pdf
PD - 97426IRGP4069PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4069-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOA GtSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILME Positive VCE (ON) Temperature Coefficient
irgp4069dpbf.pdf
PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv
Otros transistores... IRGP4063 , IRGP4063D , IRGP4066 , IRGP4066D , IRGP4066D-E , IRGP4066-E , IRGP4068D , IRGP4068D-E , IHW20N120R2 , IRGP4069D , IRGP4072D , IRGP4086 , IRGP50B60PD , IRGP50B60PD1 , IRGP50B60PD1-EP , IRGPS40B120U , IRGPS40B120UD .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2