IRGP4069 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGP4069  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 268 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 76 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

Coesⓘ - Capacitancia de salida, typ: 197 pF

Encapsulados: TO247

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IRGP4069 datasheet

 ..1. Size:268K  international rectifier
 irgp4069.pdf pdf_icon

IRGP4069

PD - 97426 IRGP4069PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4069-EPbF Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 35A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM E Positive VCE (ON) Temperature Coefficient

 0.1. Size:295K  international rectifier
 irgp4069dpbf.pdf pdf_icon

IRGP4069

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4069D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 35A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positiv

 0.2. Size:309K  international rectifier
 irgp4069d-e.pdf pdf_icon

IRGP4069

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4069D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 35A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positiv

 0.3. Size:309K  international rectifier
 irgp4069d.pdf pdf_icon

IRGP4069

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4069D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 35A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positiv

MOSTRAR MÁS

Otros transistores... IRGP4063, IRGP4063D, IRGP4066, IRGP4066D, IRGP4066D-E, IRGP4066-E, IRGP4068D, IRGP4068D-E, IHW20N135R3, IRGP4069D, IRGP4072D, IRGP4086, IRGP50B60PD, IRGP50B60PD1, IRGP50B60PD1-EP, IRGPS40B120U, IRGPS40B120UD