IRGP4069 IGBT. Datasheet pdf. Equivalent

Type Designator: IRGP4069

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 268

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.85

Maximum Collector Current |Ic|, A: 76

Package: TO247

IRGP4069 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRGP4069 Datasheet (PDF)

0.1. irgp4069-e.pdf Size:268K _international_rectifier

PD - 97426 IRGP4069PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4069-EPbF Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 35A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM E • Positive VCE (ON) Temperature Coefficient

0.2. irgp4069d.pdf Size:309K _international_rectifier

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4069D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 35A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM • Positiv

0.3. irgp4069d-e.pdf Size:309K _international_rectifier