IRGS30B60K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGS30B60K  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 370 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 78 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.95 V @25℃

trⓘ - Tiempo de subida, typ: 28 nS

Coesⓘ - Capacitancia de salida, typ: 160 pF

Encapsulados: D2PAK

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IRGS30B60K datasheet

 ..1. Size:339K  international rectifier
 irgs30b60k.pdf pdf_icon

IRGS30B60K

PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features IC = 50A, TC=100 C Low VCE (on) Non Punch Through IGBT Technology. at TJ=175 C 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperature rated at 175 C. VCE(on) typ.

 0.1. Size:305K  international rectifier
 auirgs30b60k.pdf pdf_icon

IRGS30B60K

PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features Low VCE(on) Non Punch Through IGBT Technology IC = 50A, TC=100 C 10 s Short Circuit Capability at TJ=175 C Square RBSOA G tsc > 10 s, TJ=150 C Positive VCE(on) Temperature Coefficient E Maximum Junction Temperature rated at 175 C VCE(on) typ.

Otros transistores... IRGP50B60PD1-EP, IRGPS40B120U, IRGPS40B120UD, IRGPS60B120KD, IRGR3B60KD2, IRGS10B60KD, IRGS15B60K, IRGS15B60KD, MBQ60T65PES, IRGS4056D, IRGS4062D, IRGS4086, IRGS4B60K, IRGS4B60KD1, IRGS6B60K, IRGS6B60KD, IRGS8B60K