IRGS30B60K Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IRGS30B60K Specs and Replacement

   Type Designator: IRGS30B60K
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 370 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 78 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   tr ⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 160 pF
   Package: D2PAK

IRGS30B60K Substitution

- IGBT ⓘ Cross-Reference Search

IRGS30B60K datasheet

..1. Size:339K international rectifier
irgs30b60k.pdf pdf_icon

PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features IC = 50A, TC=100 C Low VCE (on) Non Punch Through IGBT Technology. at TJ=175 C 10 s Short Circuit Capability. G Square RBSOA. tsc > 10 s, TJ=150 C Positive VCE (on) Temperature Coefficient. E Maximum Junction Temperature rated at 175 C. VCE(on) typ. ... See More ⇒

0.1. Size:305K international rectifier
auirgs30b60k.pdf pdf_icon

PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features Low VCE(on) Non Punch Through IGBT Technology IC = 50A, TC=100 C 10 s Short Circuit Capability at TJ=175 C Square RBSOA G tsc > 10 s, TJ=150 C Positive VCE(on) Temperature Coefficient E Maximum Junction Temperature rated at 175 C VCE(on) typ.... See More ⇒

Specs: IRGP50B60PD1-EP , IRGPS40B120U , IRGPS40B120UD , IRGPS60B120KD , IRGR3B60KD2 , IRGS10B60KD , IRGS15B60K , IRGS15B60KD , MBQ60T65PES , IRGS4056D , IRGS4062D , IRGS4086 , IRGS4B60K , IRGS4B60KD1 , IRGS6B60K , IRGS6B60KD , IRGS8B60K .