RJH1CD7DPQ-E0 Todos los transistores

 

RJH1CD7DPQ-E0 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJH1CD7DPQ-E0
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 328.9 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Coesⓘ - Capacitancia de salida, typ: 70 pF
   Paquete / Cubierta: TO247
 

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RJH1CD7DPQ-E0 PDF specs

 ..1. Size:98K  renesas
 rjh1cd7dpq-e0.pdf pdf_icon

RJH1CD7DPQ-E0

Preliminary Datasheet RJH1CD7DPQ-E0 R07DS0519EJ0500 1200V - 30A - IGBT Rev.5.00 Application Inverter Jun 12, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wa... See More ⇒

 3.1. Size:50K  renesas
 rjh1cd7dpq-a0.pdf pdf_icon

RJH1CD7DPQ-E0

Preliminary Datasheet RJH1CD7DPQ-A0 R07DS0453EJ0100 1200 V - 25 A - IGBT Rev.1.00 Application Inverter Jul 22, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa... See More ⇒

 4.1. Size:53K  renesas
 r07ds0453ej rjh1cd7dpq.pdf pdf_icon

RJH1CD7DPQ-E0

Preliminary Datasheet RJH1CD7DPQ-A0 R07DS0453EJ0100 1200 V - 25 A - IGBT Rev.1.00 Application Inverter Jul 22, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa... See More ⇒

 4.2. Size:53K  renesas
 r07ds0519ej rjh1cd7dpq.pdf pdf_icon

RJH1CD7DPQ-E0

Preliminary Datasheet RJH1CD7DPQ-E0 R07DS0519EJ0300 1200 V - 30 A - IGBT Rev.3.00 Application Inverter Nov 21, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa... See More ⇒

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Otros transistores... IRGSL4062D , IRGSL4B60KD1 , IRGSL6B60KD , RJH1CD5DPQ-A0 , RJH1CD5DPQ-E0 , RJH1CD6DPQ-A0 , RJH1CD6DPQ-E0 , RJH1CD7DPQ-A0 , IHW20N120R3 , RJH1CM5DPQ-E0 , RJH1CM6DPQ-E0 , RJH1CM7DPQ-E0 , RJH1CV5DPQ-E0 , RJH1CV6DPQ-E0 , RJH1CV7DPQ-E0 , RJH30H1DPP-M0 , RJH30H2DPK-M0 .

History: BRGH25N120D | BSM150GAL120DN2

 

 
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