RJH1CD7DPQ-E0 Specs and Replacement
Type Designator: RJH1CD7DPQ-E0
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 328.9 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 70 pF
Package: TO247
RJH1CD7DPQ-E0 Substitution - IGBTⓘ Cross-Reference Search
RJH1CD7DPQ-E0 datasheet
rjh1cd7dpq-e0.pdf
Preliminary Datasheet RJH1CD7DPQ-E0 R07DS0519EJ0500 1200V - 30A - IGBT Rev.5.00 Application Inverter Jun 12, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built-in fast recovery diode (trr = 180 ns typ.) in one package Trench gate and thin wa... See More ⇒
rjh1cd7dpq-a0.pdf
Preliminary Datasheet RJH1CD7DPQ-A0 R07DS0453EJ0100 1200 V - 25 A - IGBT Rev.1.00 Application Inverter Jul 22, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa... See More ⇒
r07ds0453ej rjh1cd7dpq.pdf
Preliminary Datasheet RJH1CD7DPQ-A0 R07DS0453EJ0100 1200 V - 25 A - IGBT Rev.1.00 Application Inverter Jul 22, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa... See More ⇒
r07ds0519ej rjh1cd7dpq.pdf
Preliminary Datasheet RJH1CD7DPQ-E0 R07DS0519EJ0300 1200 V - 30 A - IGBT Rev.3.00 Application Inverter Nov 21, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wa... See More ⇒
Specs: IRGSL4062D, IRGSL4B60KD1, IRGSL6B60KD, RJH1CD5DPQ-A0, RJH1CD5DPQ-E0, RJH1CD6DPQ-A0, RJH1CD6DPQ-E0, RJH1CD7DPQ-A0, IHW20N120R3, RJH1CM5DPQ-E0, RJH1CM6DPQ-E0, RJH1CM7DPQ-E0, RJH1CV5DPQ-E0, RJH1CV6DPQ-E0, RJH1CV7DPQ-E0, RJH30H1DPP-M0, RJH30H2DPK-M0
Keywords - RJH1CD7DPQ-E0 transistor spec
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History: AFGY120T65SPD
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