RJH30H2DPK-M0 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJH30H2DPK-M0  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 60 W

|Vce|ⓘ - Tensión máxima colector-emisor: 360 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃

trⓘ - Tiempo de subida, typ: 100 nS

Coesⓘ - Capacitancia de salida, typ: 80 pF

Encapsulados: TO3PSG

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RJH30H2DPK-M0 datasheet

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RJH30H2DPK-M0

Preliminary Datasheet RJH30H2DPK-M0 R07DS0464EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ High speed switching tr = 100 ns typ, tf = 180 ns typ Low leak current ICES = 1 A max Built-in Fa

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 r07ds0464ej rjh30h2dpk.pdf pdf_icon

RJH30H2DPK-M0

Preliminary Datasheet RJH30H2DPK-M0 R07DS0464EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ High speed switching tr = 100 ns typ, tf = 180 ns typ Low leak current ICES = 1 A max Built-in Fa

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 r07ds0463ej rjh30h1dpp.pdf pdf_icon

RJH30H2DPK-M0

Preliminary Datasheet RJH30H1DPP-M0 R07DS0463EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat)= 1.5 V typ. Low leak current ICES = 1 A max. Built-in F

 8.2. Size:131K  renesas
 rjh30h1dpp-m0.pdf pdf_icon

RJH30H2DPK-M0

Preliminary Datasheet RJH30H1DPP-M0 R07DS0463EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat)= 1.5 V typ. Low leak current ICES = 1 A max. Built-in F

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