Справочник IGBT. RJH30H2DPK-M0

 

RJH30H2DPK-M0 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: RJH30H2DPK-M0
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 360 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 35 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.4 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 100 nS
   Coesⓘ - Выходная емкость, типовая: 80 pF
   Qgⓘ - Общий заряд затвора, typ: 37 nC
   Тип корпуса: TO3PSG

 Аналог (замена) для RJH30H2DPK-M0

 

 

RJH30H2DPK-M0 Datasheet (PDF)

 ..1. Size:130K  renesas
 rjh30h2dpk-m0.pdf

RJH30H2DPK-M0 RJH30H2DPK-M0

Preliminary Datasheet RJH30H2DPK-M0 R07DS0464EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fa

 4.1. Size:152K  renesas
 r07ds0464ej rjh30h2dpk.pdf

RJH30H2DPK-M0 RJH30H2DPK-M0

Preliminary Datasheet RJH30H2DPK-M0 R07DS0464EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fa

 8.1. Size:152K  renesas
 r07ds0463ej rjh30h1dpp.pdf

RJH30H2DPK-M0 RJH30H2DPK-M0

Preliminary Datasheet RJH30H1DPP-M0 R07DS0463EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in F

 8.2. Size:131K  renesas
 rjh30h1dpp-m0.pdf

RJH30H2DPK-M0 RJH30H2DPK-M0

Preliminary Datasheet RJH30H1DPP-M0 R07DS0463EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in F

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