RJH30H2DPK-M0 PDF and Equivalents Search

 

RJH30H2DPK-M0 Specs and Replacement

Type Designator: RJH30H2DPK-M0

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 60 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 360 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 35 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Coesⓘ - Output Capacitance, typ: 80 pF

Package: TO3PSG

 RJH30H2DPK-M0 Substitution

- IGBT ⓘ Cross-Reference Search

 

RJH30H2DPK-M0 datasheet

 ..1. Size:130K  renesas
 rjh30h2dpk-m0.pdf pdf_icon

RJH30H2DPK-M0

Preliminary Datasheet RJH30H2DPK-M0 R07DS0464EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ High speed switching tr = 100 ns typ, tf = 180 ns typ Low leak current ICES = 1 A max Built-in Fa... See More ⇒

 4.1. Size:152K  renesas
 r07ds0464ej rjh30h2dpk.pdf pdf_icon

RJH30H2DPK-M0

Preliminary Datasheet RJH30H2DPK-M0 R07DS0464EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ High speed switching tr = 100 ns typ, tf = 180 ns typ Low leak current ICES = 1 A max Built-in Fa... See More ⇒

 8.1. Size:152K  renesas
 r07ds0463ej rjh30h1dpp.pdf pdf_icon

RJH30H2DPK-M0

Preliminary Datasheet RJH30H1DPP-M0 R07DS0463EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat)= 1.5 V typ. Low leak current ICES = 1 A max. Built-in F... See More ⇒

 8.2. Size:131K  renesas
 rjh30h1dpp-m0.pdf pdf_icon

RJH30H2DPK-M0

Preliminary Datasheet RJH30H1DPP-M0 R07DS0463EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features Trench gate and thin wafer technology (G6H-II series) High speed switching tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage VCE(sat)= 1.5 V typ. Low leak current ICES = 1 A max. Built-in F... See More ⇒

SHOW MORE

Specs: RJH1CD7DPQ-E0 , RJH1CM5DPQ-E0 , RJH1CM6DPQ-E0 , RJH1CM7DPQ-E0 , RJH1CV5DPQ-E0 , RJH1CV6DPQ-E0 , RJH1CV7DPQ-E0 , RJH30H1DPP-M0 , MBQ50T65FDSC , RJH6086BDPK , RJH6087BDPK , RJH6088BDPK , RJH60D0DPM , RJH60D0DPQ-A0 , RJH60D5DPM , RJH60D5DPQ-A0 , RJH60D6DPM .

History: ISL9V5045S3ST-F085 | HIA30N140IH-DA

Keywords - RJH30H2DPK-M0 transistor spec

 RJH30H2DPK-M0 cross reference
 RJH30H2DPK-M0 equivalent finder
 RJH30H2DPK-M0 lookup
 RJH30H2DPK-M0 substitution
 RJH30H2DPK-M0 replacement

 

 

 

 

↑ Back to Top
.