RJH30H2DPK-M0 Datasheet and Replacement
Type Designator: RJH30H2DPK-M0
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 60 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 360 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 35 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 80 pF
Qg ⓘ - Total Gate Charge, typ: 37 nC
Package: TO3PSG
RJH30H2DPK-M0 substitution
RJH30H2DPK-M0 Datasheet (PDF)
rjh30h2dpk-m0.pdf
Preliminary Datasheet RJH30H2DPK-M0 R07DS0464EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fa
r07ds0464ej rjh30h2dpk.pdf
Preliminary Datasheet RJH30H2DPK-M0 R07DS0464EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fa
r07ds0463ej rjh30h1dpp.pdf
Preliminary Datasheet RJH30H1DPP-M0 R07DS0463EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in F
rjh30h1dpp-m0.pdf
Preliminary Datasheet RJH30H1DPP-M0 R07DS0463EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Built-in F
Datasheet: RJH1CD7DPQ-E0 , RJH1CM5DPQ-E0 , RJH1CM6DPQ-E0 , RJH1CM7DPQ-E0 , RJH1CV5DPQ-E0 , RJH1CV6DPQ-E0 , RJH1CV7DPQ-E0 , RJH30H1DPP-M0 , IHW20N120R3 , RJH6086BDPK , RJH6087BDPK , RJH6088BDPK , RJH60D0DPM , RJH60D0DPQ-A0 , RJH60D5DPM , RJH60D5DPQ-A0 , RJH60D6DPM .
History: SM2G200US60 | HIA50N65IH-JA | STGW30H60DFB | JT010N065FED | STGP30H60DF | IQAB50N60D1 | MPMC150B120RH
Keywords - RJH30H2DPK-M0 transistor datasheet
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History: SM2G200US60 | HIA50N65IH-JA | STGW30H60DFB | JT010N065FED | STGP30H60DF | IQAB50N60D1 | MPMC150B120RH
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