RJH6086BDPK Todos los transistores

 

RJH6086BDPK - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJH6086BDPK
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 198.4 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 45 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.65 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 71 nS
   Coesⓘ - Capacitancia de salida, typ: 165 pF
   Paquete / Cubierta: TO3P
     - Selección de transistores por parámetros

 

RJH6086BDPK Datasheet (PDF)

 ..1. Size:91K  renesas
 rjh6086bdpk.pdf pdf_icon

RJH6086BDPK

Preliminary Datasheet RJH6086BDPK R07DS0470EJ0100600 V - 45 A - IGBT Rev.1.00High Speed Power Switching Sep 28, 2011Features Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. G

 6.1. Size:94K  renesas
 r07ds0470ej rjh6086bpk.pdf pdf_icon

RJH6086BDPK

Preliminary Datasheet RJH6086BDPK R07DS0470EJ0100600 V - 45 A - IGBT Rev.1.00High Speed Power Switching Sep 28, 2011Features Ultra high speed switching tf = 36 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. G

 8.1. Size:104K  renesas
 rjh6087bdpk.pdf pdf_icon

RJH6086BDPK

Preliminary Datasheet RJH6087BDPK R07DS0389EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 11, 2011Features Ultra high speed switching tf = 55 ns typ. (at IC = 30 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gat

 8.2. Size:107K  renesas
 r07ds0390ej rjh6088bdp.pdf pdf_icon

RJH6086BDPK

Preliminary Datasheet RJH6088BDPK R07DS0390EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching May 11, 2011Features Ultra high speed switching tf = 60 ns typ. (at IC = 40 A, VCC = 300 V, VGE = 15 V, Rg = 5 , Inductive Load) Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gat

MOSTRAR MÁS

Otros transistores... RJH1CM5DPQ-E0 , RJH1CM6DPQ-E0 , RJH1CM7DPQ-E0 , RJH1CV5DPQ-E0 , RJH1CV6DPQ-E0 , RJH1CV7DPQ-E0 , RJH30H1DPP-M0 , RJH30H2DPK-M0 , IRG7R313U , RJH6087BDPK , RJH6088BDPK , RJH60D0DPM , RJH60D0DPQ-A0 , RJH60D5DPM , RJH60D5DPQ-A0 , RJH60D6DPM , RJH60D7ADPK .

History: SGL20N60RUFD | TSG40N120CE | FGM622S | IKD15N60R | IRG4PSH71K | GT10J321

 

 
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